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The TAN15 is a high-power NPN bipolar RF transistor manufactured by Microsemi Corporation. It operates within a frequency range of 960MHz to 1.215GHz and supports a maximum collector current of 2A with a peak power output of 175W. The device features a 50V collector-emitter breakdown voltage and utilizes a 55LT chassis mount package. Designed for robust performance, it maintains an operating junction temperature up to 200°C, making it suitable for demanding radio frequency applications requiring high reliability and thermal stability.
Verify the specific datasheet revision and mechanical drawing dimensions prior to integration, as chassis mount packages require precise thermal interface management. Confirm that the supply chain source provides original manufacturer documentation to ensure component authenticity and traceability. Check for any recent product change notices regarding material composition or testing standards before finalizing procurement orders.
Select the TAN15 when application requirements demand high RF power handling at frequencies near 1GHz. Ensure the system design accommodates the 55LT chassis mount form factor and provides adequate heat sinking to manage the 175W dissipation. Evaluate the 50V breakdown limit against circuit voltage spikes to prevent device failure during transient events.
This component belongs to the Microsemi family of high-power bipolar RF transistors designed for rugged environments. These devices are engineered for linear and switching operations in RF circuits where high efficiency and thermal endurance are critical. The TAN15 specifically addresses needs for medium-to-high power amplification in specialized industrial and defense sectors.
No public confirmed substitute part numbers are available for this discontinued component. Designers must evaluate equivalent high-power NPN RF transistors from other manufacturers, ensuring matching frequency ranges, power ratings, and mounting configurations.