TAN15

TAN15

  • Description:RF TRANS NPN 50V 1.215GHZ 55LT
  • Series:-

SKU:b0215f283ce3 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 50V 1.215GHZ 55LT
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Frequency - Transition:960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB ~ 8dB
  • Power - Max:175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):2A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:55LT
  • Supplier Device Package:55LT
  • Grade:-
  • Qualification:-

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TAN15

Overview

The TAN15 is a high-power NPN bipolar RF transistor manufactured by Microsemi Corporation. It operates within a frequency range of 960MHz to 1.215GHz and supports a maximum collector current of 2A with a peak power output of 175W. The device features a 50V collector-emitter breakdown voltage and utilizes a 55LT chassis mount package. Designed for robust performance, it maintains an operating junction temperature up to 200°C, making it suitable for demanding radio frequency applications requiring high reliability and thermal stability.

Feature Summary

  • High power output capability of 175W for efficient signal amplification
  • Wide frequency operation spanning 960MHz to 1.215GHz
  • Robust thermal design supporting a 200°C junction temperature
  • Chassis mount construction for secure installation in high-power systems

Applications

  • RF power amplification in communication transmitters
  • Industrial heating and plasma generation systems
  • Military radar transmitter modules

Procurement Notes

Verify the specific datasheet revision and mechanical drawing dimensions prior to integration, as chassis mount packages require precise thermal interface management. Confirm that the supply chain source provides original manufacturer documentation to ensure component authenticity and traceability. Check for any recent product change notices regarding material composition or testing standards before finalizing procurement orders.

Selection Notes

Select the TAN15 when application requirements demand high RF power handling at frequencies near 1GHz. Ensure the system design accommodates the 55LT chassis mount form factor and provides adequate heat sinking to manage the 175W dissipation. Evaluate the 50V breakdown limit against circuit voltage spikes to prevent device failure during transient events.

Part Context

This component belongs to the Microsemi family of high-power bipolar RF transistors designed for rugged environments. These devices are engineered for linear and switching operations in RF circuits where high efficiency and thermal endurance are critical. The TAN15 specifically addresses needs for medium-to-high power amplification in specialized industrial and defense sectors.

Replacement Considerations

No public confirmed substitute part numbers are available for this discontinued component. Designers must evaluate equivalent high-power NPN RF transistors from other manufacturers, ensuring matching frequency ranges, power ratings, and mounting configurations.

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