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The TAN300 is an RF bipolar transistor manufactured by Microsemi Corporation, classified under Bipolar/LDMOS Transistors. It features a single NPN configuration housed in a flange mount package with a ceramic, metal-sealed cofired body. The device supports a maximum collector current of 20 A and operates at frequencies within the L-band. It is designed for high-temperature environments with a maximum operating temperature of 200 °C. The component utilizes tin lead terminal plating and is identified by JESD-609 code e0.
Verify the RoHS compliance status carefully, as the source data indicates the component is not compliant. Confirm that the tin lead terminal finish meets your assembly requirements. Ensure the flange mount form factor aligns with your thermal management and mechanical design constraints before procurement.
Select this component when L-band performance and high thermal tolerance are required. The flange mount package necessitates specific mounting hardware and thermal interface solutions. Verify that the 20 A collector current rating satisfies the circuit's peak load demands without exceeding the junction temperature limits.
This part belongs to Microsemi's portfolio of discrete semiconductor devices. It represents a specialized RF solution distinct from standard logic or power switching transistors. The manufacturer focuses on high-reliability components for demanding electronic environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching L-band frequency ranges, 20 A current capacity, and compatible flange mount physical dimensions.
The maximum operating temperature is 200 °C.
No, the component is listed as not compliant with RoHS standards.
It uses a flange mount package with a ceramic, metal-sealed cofired body.