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The TAV-551+ is an E-PHEMT transistor designed for ultra-low noise and low current consumption. It operates within a frequency range of 0.45 to 6 GHz, utilizing a single positive supply voltage. The device features a typical gain of 16 dB at 2 GHz with a drain current of 15 mA. Key electrical specifications include a minimum noise figure of 0.5 dB at 2 GHz and a high output third-order intercept point (OIP3) of +25 dBm. It is housed in the FG873 case style.
Verify the specific RoHS compliance status by consulting the manufacturer's official documentation or website, as indicated by the plus suffix. Confirm that external biasing and matching circuits are included in your design, as the component requires these discrete elements for proper operation. Ensure the selected package variant matches the required PCB layout dimensions.
Select this component when designing amplifiers requiring minimal signal degradation in the 0.45 to 6 GHz spectrum. The device is suitable for base station front-ends where low noise and high linearity are critical. Designers must implement appropriate DC blocking and impedance matching networks to achieve the specified performance metrics.
This component belongs to the SAV/TAV family of E-PHEMT transistors manufactured by Mini-Circuits. These devices serve as the core active elements for various amplifier modules, including the TAMP and RAMP series. The TAV-551+ specifically targets applications demanding superior noise performance combined with efficient power consumption.
SAV-551+
The TAV-551+ is manufactured using Enhancement mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT) technology.
Yes, external biasing and matching circuits are required for the TAV-551+ to function correctly.
The operating temperature range for the TAV-551+ is from -40°C to +85°C.