TAV-551+

TAV-551+

$1.41
  • Description:RF MOSFET E-PHEMT 3V FG873
  • Series:-

SKU:a602a82223b8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 3V FG873
  • Series:-
  • Mfr:Mini-Circuits
  • Package:Tape & Reel (TR)
  • Technology:E-pHEMT
  • Frequency:6GHz
  • Gain:16.3dB
  • Voltage - Test:3 V
  • Current Rating (Amps):-
  • Noise Figure:1.7dB
  • Current - Test:15 mA
  • Power - Output:20.1dB
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:FG873
  • Configuration:-

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TAV-551+

Overview

The TAV-551+ is an E-PHEMT transistor designed for ultra-low noise and low current consumption. It operates within a frequency range of 0.45 to 6 GHz, utilizing a single positive supply voltage. The device features a typical gain of 16 dB at 2 GHz with a drain current of 15 mA. Key electrical specifications include a minimum noise figure of 0.5 dB at 2 GHz and a high output third-order intercept point (OIP3) of +25 dBm. It is housed in the FG873 case style.

Feature Summary

  • Utilizes E-PHEMT technology for enhanced performance
  • Provides ultra-low noise figure characteristics
  • Operates on a single positive supply voltage
  • Delivers high linearity with elevated IP3 values

Applications

  • Cellular base stations
  • ISM band applications
  • WCDMA systems
  • WiMAX infrastructure
  • WLAN networks

Procurement Notes

Verify the specific RoHS compliance status by consulting the manufacturer's official documentation or website, as indicated by the plus suffix. Confirm that external biasing and matching circuits are included in your design, as the component requires these discrete elements for proper operation. Ensure the selected package variant matches the required PCB layout dimensions.

Selection Notes

Select this component when designing amplifiers requiring minimal signal degradation in the 0.45 to 6 GHz spectrum. The device is suitable for base station front-ends where low noise and high linearity are critical. Designers must implement appropriate DC blocking and impedance matching networks to achieve the specified performance metrics.

Part Context

This component belongs to the SAV/TAV family of E-PHEMT transistors manufactured by Mini-Circuits. These devices serve as the core active elements for various amplifier modules, including the TAMP and RAMP series. The TAV-551+ specifically targets applications demanding superior noise performance combined with efficient power consumption.

Replacement Considerations

SAV-551+

FAQ

What technology is used to manufacture the TAV-551+?

The TAV-551+ is manufactured using Enhancement mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT) technology.

Does the TAV-551+ require external components for operation?

Yes, external biasing and matching circuits are required for the TAV-551+ to function correctly.

What is the operating temperature range for this device?

The operating temperature range for the TAV-551+ is from -40°C to +85°C.

TAV-551+TAV-551+
$1.41
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