TAV1-331+

TAV1-331+

$1.70
  • Description:RF MOSFET D-PHEMT 4V TE2769
  • Series:-

SKU:780e86992f7e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET D-PHEMT 4V TE2769
  • Series:-
  • Mfr:Mini-Circuits
  • Package:Tape & Reel (TR)
  • Technology:D-pHEMT
  • Frequency:4GHz
  • Gain:24.6dB
  • Voltage - Test:4 V
  • Current Rating (Amps):228mA
  • Noise Figure:1dB
  • Current - Test:60 mA
  • Power - Output:21.3dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:TE2769
  • Configuration:-

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TAV1-331+

Overview

The TAV1-331+ is a D-PHEMT MMIC transistor operating from 10 to 4000 MHz. It features a typical noise figure of 0.6 dB at 300 MHz and gain of 24.1 dB at the same frequency. Output IP3 reaches +31.8 dBm at 300 MHz, with P1dB at +20.1 dBm. The device draws 60 mA at VDS=4V. Packaged in a 1.4x1.2mm MCLP (Case Style TE2769), it requires external biasing and matching networks.

Feature Summary

  • Combines high gain with ultra-low noise figure for sensitive receiver applications
  • High linearity performance relative to power consumption across wideband frequencies
  • Suitable for driver amplifiers in complex waveform up-converter paths

Applications

  • Cellular communications systems
  • ISM band applications
  • GSM and WCDMA infrastructure
  • WiMax and WLAN implementations
  • UNII and HIPERLAN systems

Procurement Notes

Verify component authenticity through official Mini-Circuits channels or authorized distributors. Confirm package integrity and ESD protection status upon receipt. Ensure compatibility with required PCB layout guidelines provided by the manufacturer. Validate electrical specifications against current datasheet revisions before integration into final designs.

Selection Notes

Select this component for designs requiring low noise and high gain in the 10 to 4000 MHz range. External biasing and impedance matching circuits are mandatory for operation. Consider thermal resistance and dissipation limits when designing heat management solutions. Evaluate system-level noise requirements against the device's specific noise figure characteristics.

Part Context

This model belongs to the D-PHEMT transistor family manufactured using depletion mode pseudomorphic high electron mobility transistor technology. It is housed in a compact plastic package with an exposed paddle for grounding. The device is designed for RF and microwave signal processing within wireless communication architectures.

Replacement Considerations

The TAV1-331+ may serve as a replacement for the Broadcom ATF-331M4. Suitability depends on specific system electrical criteria, stimulus conditions, and environmental stresses. Verification of performance compatibility is the customer's responsibility.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) rating is 5 V.

Does the device require external components for operation?

Yes, external biasing and matching networks are required for proper functionality.

What is the human body model ESD rating?

The ESD rating is Class 0 (<250V) according to ANSI/ESD STM 5.1 - 2001.

TAV1-331+TAV1-331+
$1.70
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