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Product Detailed Parameters
- Description：RF MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Configuration：-
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Overview
The TBB1002BMTL-E is a twin built-in biasing circuit MOS FET IC designed for VHF/UHF RF amplifier applications. It integrates two N-channel silicon metal-oxide semiconductor field-effect transistors within a compact CMPAK-6 small SMD package. The device features a drain-to-source breakdown voltage of 6V and is optimized for world standard tuner RF amplifiers, offering reduced component count and PCB space utilization.
Feature Summary
- Integrates twin built-in biasing circuit MOS FETs in a single unit
- Utilizes compact CMPAK-6 small SMD package design
- Optimized for VHF/UHF frequency band operations
Applications
- World standard tuner RF amplifiers
- VHF/UHF RF signal processing circuits
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the manufacturer's current datasheet to ensure compatibility with automated assembly processes. Confirm that the CMPAK-6 package dimensions align with your PCB footprint requirements. Cross-reference the part number with official Renesas Electronics documentation to validate authenticity and revision status before procurement.
Selection Notes
Select this component when designing VHF/UHF RF amplifier stages requiring integrated biasing solutions to minimize external passive components. The dual-FET configuration supports balanced circuit topologies. Ensure the 6V breakdown voltage rating meets the system's power supply constraints. Evaluate the CMPAK-6 package size against available board real estate for optimal layout efficiency.
Part Context
This part belongs to Renesas' RF FET series, specifically engineered for high-frequency analog signal amplification. It serves as an alternative to discrete FET arrangements by combining two elements into one package. The product line targets consumer electronics and communication devices requiring efficient RF front-end designs with minimal spatial footprint.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters such as breakdown voltage and frequency range before substituting.
