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Product Detailed Parameters
- Description：RF MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
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- Voltage - Rated：-
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Overview
The TBB1005EMTL-H is a Twin Built-in Biasing Circuit MOS FET IC designed for VHF/UHF RF amplifier applications. Manufactured by Renesas Electronics Corporation, this component utilizes Metal-Oxide Semiconductor (MOS) technology and features an N-channel configuration with dual gate depletion mode operation. It is housed in a CMPAK-6 plastic small outline package containing two internal elements. Key electrical specifications include a minimum drain-source breakdown voltage of 6V, a maximum continuous drain current of 0.03A, and a maximum feedback capacitance (Crss) of 0.04pF. The device offers a minimum power gain of 16dB and supports operating temperatures up to 150°C with a maximum power dissipation of 0.25W.
Feature Summary
- Integrates twin built-in biasing circuits within a single compact IC for simplified RF amplifier design.
Applications
- VHF RF amplification stages
- UHF RF amplification stages
Procurement Notes
Verify the specific suffix EMTL-H against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance with EAR99 export classification requirements for your region. Confirm that the CMPAK-6 package dimensions align with your PCB footprint constraints before finalizing procurement orders.
Selection Notes
Select this component when designing VHF or UHF amplifiers requiring integrated biasing solutions to reduce external component count. Verify that the 6V breakdown voltage and 0.03A current limits meet the specific signal and load requirements of the target RF circuit. Consider the 0.04pF feedback capacitance for high-frequency stability analysis.
Part Context
The TBB1005 series belongs to Renesas' discrete semiconductor transistor lineup, specifically categorized under MOS FET ICs. This part represents a specialized solution for radio frequency applications where space efficiency and integrated biasing are critical. It complements broader RF product portfolios by providing a ready-to-use amplification stage without complex external bias networks.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Ensure any replacement maintains the CMPAK-6 package, 6V breakdown voltage, and dual-gate depletion mode characteristics to preserve circuit functionality.
