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Product Detailed Parameters
- Description：RF MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Configuration：-
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Overview
The TBB1012MMTL-H is an RF small signal field-effect transistor manufactured by Renesas Electronics Corporation. It is a two-element, ultra-high frequency band silicon N-channel metal-oxide semiconductor FET designed for radio frequency applications. The component is supplied in a tape and reel format, specifically packaged on a 3000-piece, 178mm diameter reel with 8mm emboss taping, ensuring compatibility with standard automated surface-mount assembly processes.
Feature Summary
- Ultra-high frequency band operation capability
- Silicon N-channel metal-oxide semiconductor construction
- Two-element RF small signal design
Applications
- Radio frequency signal amplification
- Ultra-high frequency circuit switching
- RF front-end module integration
Procurement Notes
Verify the specific suffix 'H' against the manufacturer's latest documentation to confirm package and tape specifications. Ensure the procurement channel provides valid traceability for the Renesas Electronics Corporation part number. Confirm that the receiving facility supports the required 8mm emboss taping handling procedures for the 178mm reel format.
Selection Notes
Select this component when designing circuits requiring ultra-high frequency performance using a silicon N-channel MOSFET structure. Consider the two-element configuration for space-constrained RF layouts. Evaluate the suitability of the specified packaging format against existing automated assembly equipment capabilities to ensure seamless integration into the production workflow.
Part Context
This device belongs to the TBB1012 series from Renesas Electronics Corporation, which includes variants such as the TBB1012MMTL-E. The series focuses on RF small signal applications utilizing silicon technology. The specific model designation indicates the particular packaging and taping configuration provided by the manufacturer for distribution.
Replacement Considerations
Consult official Renesas documentation for direct substitutes within the TBB1012 series, such as the TBB1012MMTL-E, verifying pinout and electrical parameter compatibility before implementation.
