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Product Detailed Parameters
- Description：MOSFET N/P-CH 200V 8SOIC
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 25V, 125pF @ 25V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The TC2320TG-G is a high-voltage, low-threshold N-channel and P-channel enhancement-mode dual MOSFET manufactured by Microchip Technology. It utilizes an advanced vertical DMOS structure in an 8-lead SOIC package. The device features a drain-to-source breakdown voltage of 200V for both channels. Maximum on-state resistance is specified at 7 ohms for the N-channel and 12 ohms for the P-channel. Input capacitance reaches up to 125 pF. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Low threshold voltage operation
- Fast switching speeds
- Free from secondary breakdown
- Independent electrically isolated channels
Applications
- Medical Ultrasound Transmitters
- High-Voltage Pulsers
- Piezoelectric Transducer Drivers
- Logic-Level Interface
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Ensure the component matches the required lead-free specifications. Confirm that the manufacturer's standard delivery time aligns with project schedules before finalizing procurement orders.
Selection Notes
Select this component when designs require high input impedance combined with bipolar-like power handling capabilities. The low threshold characteristic supports logic-level interface applications effectively. Verify that the thermal resistance and operating temperature range meet the specific environmental constraints of the target system design.
Part Context
This part belongs to the TC2320 family of dual MOSFET arrays. It integrates separate N-channel and P-channel enhancement-mode transistors into a single surface-mount package. The vertical DMOS technology ensures positive temperature coefficients, preventing thermal runaway during operation.
Replacement Considerations
Consult official datasheets for direct pin-compatible alternatives within the same product family. Verify electrical parameters such as breakdown voltage and on-resistance match the original requirements before substitution.
