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Product Detailed Parameters
- Description：MOSFET N/P-CH 150V 8SOIC
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：150V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 25V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The TC6215TG-G is a high-voltage, low-threshold dual MOSFET array featuring independent N-channel and P-channel enhancement-mode transistors in an 8-Lead SOIC package. It integrates back-to-back gate-source Zener diodes for protection. The device guarantees RDS(ON) ratings at 4.0V gate drive, enabling direct interfacing with standard 5.0V CMOS logic. Key electrical parameters include a drain-to-source breakdown voltage of 150V for both channels, a maximum gate threshold voltage of 2.0V, and input capacitance of 120pF (N-channel) or 127pF (P-channel).
Feature Summary
- Integrated back-to-back gate-source Zener diode clamps for enhanced protection.
- Guaranteed on-resistance performance at low 4.0V gate drive levels.
- Electrically isolated N- and P-channel configurations within a single package.
- Low input capacitance supporting fast switching speeds.
Applications
- High voltage pulsers
- Amplifiers
- Buffers
- Piezoelectric transducer drivers
- General purpose line drivers
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, such as tape-and-reel or cut tape options. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement plans. Ensure the component matches the required thermal and electrical specifications for the intended circuit design.
Selection Notes
Select this component for applications requiring high voltage handling with low threshold control. The integrated Zener protection simplifies gate drive circuitry. Verify that the operating voltage and current requirements align with the specified absolute maximum ratings and on-state resistance characteristics.
Part Context
This part belongs to the TC6215 series of dual MOSFET arrays manufactured by Microchip Technology. It utilizes vertical DMOS structure technology to provide bipolar-like power handling with MOSFET input impedance. The 'G' suffix indicates RoHS compliant packaging.
Replacement Considerations
Consult official datasheets for cross-reference data. No public substitute part numbers are confirmed in the provided documentation.
FAQ
What is the function of the integrated components in the gate?
The device includes back-to-back gate-source Zener diodes to clamp the gate voltage and protect against overvoltage conditions.
Can this MOSFET be driven directly by 5V logic?
Yes, the device features guaranteed RDS(ON) ratings down to 4.0V gate drive, allowing direct interfacing with standard 5.0V CMOS logic.
Are the N-channel and P-channel electrically connected?
No, the N-channel and P-channel transistors are electrically isolated from each other within the package.
