TC6320K6-G

$1.47

Description：MOSFET N/P-CH 200V 8DFN
Series：-

SKU:4111ff6bbf59 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 200V 8DFN
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：200V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：110pF @ 25V, 125pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-VDFN Exposed Pad
Supplier Device Package：8-DFN (4x4)
Grade：-
Qualification：-

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TC6320K6-G

Overview

The TC6320K6-G is a high-voltage, low-threshold N-channel and P-channel MOSFET pair manufactured by Microchip Technology. It features an integrated gate-to-source resistor and Zener diode clamp for protection. The device utilizes an advanced vertical DMOS structure to provide high input impedance and fast switching speeds while remaining free from secondary breakdown. It is housed in an 8-lead (4x4) VDFN package with exposed thermal pads.

Feature Summary

Integrated gate-to-source resistors and Zener diode clamps for enhanced protection
Low threshold voltage and low on-resistance for efficient switching
Fast switching speeds with low input capacitance
Free from thermal runaway and thermally induced secondary breakdown

Applications

High-voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers

Procurement Notes

Verify the specific ordering suffix 'K6' corresponds to the 8-lead DFN package configuration. Confirm that the 'G' suffix indicates lead-free and RoHS compliance as per the manufacturer's product identification system. Ensure the component matches the exact datasheet revision DS20005697A for accurate electrical specifications.

Selection Notes

Select this component for applications requiring high-voltage switching with low drive requirements. The complementary N/P-channel design simplifies circuit topology for push-pull configurations. Consider the thermal resistance of the DFN package when designing heat dissipation strategies for continuous operation at elevated temperatures.

Part Context

This part belongs to the TC6320 family of dual MOSFET arrays. It is functionally similar to the TC6320TG-G but differs in packaging. The K6 suffix specifically denotes the 8-lead (4x4) VDFN package type, which offers a smaller footprint compared to the SOIC variant.