TC6320TG-G

$1.54

Description：MOSFET N/P-CH 200V 8SOIC
Series：-

SKU:c9e8b8593c55 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 200V 8SOIC
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：200V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：110pF @ 25V, 125pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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TC6320TG-G

Overview

The TC6320TG-G is a high-voltage, low-threshold N-channel and P-channel MOSFET pair in an 8-lead SOIC package. It features integrated gate-to-source resistors and Zener diode clamps for high-voltage pulser applications. The device utilizes an advanced vertical DMOS structure, offering bipolar-like power handling with high input impedance and positive temperature coefficients. Key electrical parameters include a drain-to-source breakdown voltage of 200V, on-state resistance of 7Ω (N-channel) and 8Ω (P-channel), and fast switching speeds with rise/fall times of 15ns.

Feature Summary

Integrated gate-to-source resistors and Zener diode clamps
Advanced vertical DMOS structure for thermal stability
Complementary enhancement-mode N-channel and P-channel configuration
Low threshold voltage and low input capacitance

Applications

High-voltage pulsers
Amplifiers
Piezoelectric transducer drivers
General purpose line drivers
Logic-level interfaces

Procurement Notes

Verify the specific ordering suffix to confirm the package type and environmental compliance. The 'TG' suffix indicates an 8-lead SOIC package, while 'K6' denotes an 8-lead DFN. Ensure the 'G' suffix is present to confirm lead-free and RoHS-compliant manufacturing standards. Confirm availability through authorized Microchip distributors or direct factory channels.

Selection Notes

Select this component when designing circuits requiring high-voltage switching with low drive requirements. The integrated gate protection simplifies driver design by eliminating external clamping components. Consider the thermal resistance of the SOIC package for heat dissipation needs. Verify that the required current ratings align with the specified continuous drain current limits under your operating conditions.

Part Context

The TC6320 series includes variants such as TC6320K6-G (8-lead DFN) and TC6320TG-G (8-lead SOIC). Both share identical electrical characteristics but differ in physical packaging. The TG variant is suitable for surface mount applications requiring standard SOIC footprint compatibility. This family is designed for high-speed, high-voltage switching applications where reliability and thermal performance are critical.