TC7920K6-G

Overview

The TC7920K6-G is a dual-pair, enhancement-mode MOSFET array featuring electrically isolated N-channel and P-channel devices in a 12-lead DFN package. It utilizes high-voltage vertical DMOS technology with integrated drain output diodes, gate-to-source resistors, and Zener clamps. The N-channel variant offers a breakdown voltage of 200V and a maximum on-resistance of 7.0Ω, while the P-channel provides -200V breakdown and 8.0Ω resistance. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Electrically isolated complementary N- and P-channel MOSFET pairs
• Integrated high-voltage drain output diodes for pulser applications
• Built-in gate-to-source resistors and Zener diode clamps
• Low threshold voltage and fast switching speeds

Applications

• High voltage pulsers
• Piezoelectric transducer drivers
• Logic level interfaces
• General purpose line drivers

Procurement Notes

Verify the manufacturer origin, as the datasheet identifies Supertex Inc., while the model suffix may imply Microchip Technology distribution or acquisition status. Confirm RoHS compliance details and ensure the 12-Lead DFN package dimensions match the design requirements. Check for specific environmental certifications required by the target application before finalizing procurement.

Selection Notes

Select this component for circuits requiring high-voltage isolation between logic inputs and power outputs. The integrated gate protection simplifies driver circuitry, reducing external component count. Ensure the thermal pad is properly grounded to manage heat dissipation within the specified operating temperature range. Verify that the low input capacitance meets the bandwidth requirements of the intended signal path.

Part Context

Originally manufactured by Supertex Inc., this device belongs to a family of high-voltage MOSFET arrays designed for robust switching applications. The TC7920 integrates multiple protective features typically found in discrete designs into a single compact package. It serves as a bridge between low-voltage control logic and high-voltage loads, offering a solution for space-constrained designs requiring high reliability.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the function of the integrated gate-to-source Zener diode?

It provides clamp protection for the gate terminal, safeguarding the MOSFET against overvoltage conditions during operation.

How does the device handle thermal management?

The 12-Lead DFN package includes a thermal pad that must be grounded externally to dissipate heat effectively, with a typical thermal resistance of 42°C/W.

Are the N- and P-channel pairs electrically connected?

No, the N- and P-channel MOSFET pairs are electrically isolated from each other within the package.