TC8020K6-G-M937

$7.14

Description：MOSFET 6N/6P-CH 200V 56QFN
Series：-

SKU:41408b090c81 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 6N/6P-CH 200V 56QFN
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：6 N and 6 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：200V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：56-VFQFN Exposed Pad
Supplier Device Package：56-QFN (8x8)
Grade：-
Qualification：-

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TC8020K6-G-M937

Overview

The TC8020K6-G-M937 is a six-pair, N- and P-channel enhancement-mode MOSFET array housed in a 56-lead QFN (K6) package. It utilizes high-voltage vertical DMOS technology to provide electrically isolated complementary pairs with integrated gate-to-source resistors and Zener diode clamps. The device features a drain-to-source breakdown voltage of 200V for both channels, with maximum on-state resistances of 8.0Ω for the N-channel and 9.5Ω for the P-channel.

Feature Summary

Integrates gate-to-source resistors and Zener diode clamps for high-voltage protection
Utilizes advanced vertical DMOS structure for fast switching speeds
Provides electrically isolated N- and P-channel pairs within a single package

Applications

High voltage pulsers
Amplifiers and buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces

Procurement Notes

Verify that the ordering suffix M937 corresponds to the specific reel packing configuration listed in official Microchip documentation. Confirm RoHS compliance status via the -G suffix designation. Ensure the 56-lead QFN thermal pad grounding requirements are met during PCB layout to maintain specified thermal performance.

Selection Notes

Select this component when designing circuits requiring high-voltage isolation between multiple signal paths. The integrated gate protection simplifies driver design by eliminating external clamping components. Verify that the 200V breakdown rating exceeds the peak operating voltages of the target application to ensure long-term reliability under transient conditions.

Part Context

Originally manufactured by Supertex Inc., this component was acquired by Microchip Technology. The datasheet retains the original Supertex branding and document numbering conventions. The product represents a specialized discrete power solution distinct from standard logic-level MOSFETs, focusing on high-voltage pulse generation capabilities.