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Product Detailed Parameters
- Description：MOSFET 6N/6P-CH 200V 56QFN
- Series：-
- Mfr：Microchip Technology
- Package：Tray
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N and 6 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：56-VFQFN Exposed Pad
- Supplier Device Package：56-QFN (8x8)
- Grade：-
- Qualification：-
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Overview
The TC8020K6-G is a six-pair, N- and P-channel enhancement-mode MOSFET array housed in a 56-lead QFN package. It utilizes high-voltage vertical DMOS technology with integrated gate-to-source resistors and Zener diode clamps. The device features a drain-to-source breakdown voltage of 200V for both polarities. Maximum on-state resistance is specified at 9.0Ω for the N-channel and 9.5Ω for the P-channel. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Six pairs of electrically isolated N- and P-channel MOSFETs
- Integrated gate-to-source resistors and Zener diode clamps
- High-voltage vertical DMOS structure
- Fast switching speeds with low input and output capacitance
Applications
- High voltage pulsers
- Amplifiers and buffers
- Piezoelectric transducer drivers
- General purpose line drivers
- Logic level interfaces
Procurement Notes
Verify the manufacturer origin, as the datasheet identifies Supertex Inc., while distributor listings may attribute it to Microchip Technology due to acquisition history. Confirm the specific suffix 'G' indicates RoHS compliance. Ensure the 56-lead QFN (K6) package matches the design requirements. Check for any specific handling instructions regarding the exposed thermal pad substrate.
Selection Notes
Select this component when designing circuits requiring multiple high-voltage switching pairs in a compact footprint. The integrated gate protection simplifies driver circuitry by eliminating external clamping components. Consider the 200V breakdown rating and the specific on-resistance values for power dissipation calculations. Verify that the logic level interface requirements align with the threshold voltage specifications provided in the electrical characteristics.
Part Context
This component belongs to the TC8020 family of general-purpose MOSFET arrays. Originally developed by Supertex Inc., these devices are characterized by their complementary N- and P-channel configurations. The K6 package variant provides a dense layout suitable for applications where space constraints limit the use of discrete transistors. The device offers thermal stability inherent to MOS structures.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully if considering alternatives from other manufacturers.
