TC8220K6-G

Overview

The TC8220K6-G is a high-voltage MOSFET array featuring two pairs of electrically isolated N-channel and P-channel enhancement-mode transistors in a 12-lead DFN package. It utilizes vertical DMOS technology with integrated gate-to-source resistors and Zener diode clamps. The device supports a drain-to-source voltage of 200V, with maximum on-state resistance of 6.5Ω for N-channel and 7Ω for P-channel at 1A. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrated gate-to-source resistors and Zener diode clamps for high-voltage pulser applications
• Electrically isolated complementary N-channel and P-channel MOSFET pairs
• Advanced vertical DMOS structure providing fast switching speeds and low threshold voltage

Applications

• High-voltage pulsers
• Amplifiers and buffers
• Piezoelectric transducer drivers
• General purpose line drivers
• Logic-level interfaces

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm packaging details. The K6 designation corresponds to the 12-lead DFN package configuration. Ensure environmental compliance requirements match the 'G' suffix specifications. Confirm thermal pad grounding requirements during PCB layout to maintain optimal thermal performance and electrical isolation.

Selection Notes

Select this component for designs requiring high-voltage switching with integrated protection features. The built-in gate clamping eliminates external components typically needed for high-voltage gate drive protection. Verify that the 200V breakdown voltage meets system peak voltage requirements. Consider the 12-lead DFN package dimensions for board space constraints and thermal dissipation needs.

Part Context

This part belongs to the TC8220 family of high-voltage MOSFET arrays manufactured by Microchip Technology. It represents an evolution of vertical DMOS technology designed for robust switching applications. The device integrates multiple functions into a single compact package, reducing component count and board area compared to discrete solutions.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. No cross-references are provided in the source material.

FAQ

What is the function of the thermal pad?

The thermal pad serves as the die attachment substrate and must be grounded externally to ensure proper heat dissipation and electrical operation.

Are the N-channel and P-channel MOSFETs electrically connected?

No, the N-channel and P-channel MOSFET pairs within each pair are electrically isolated from each other.

What protection features are integrated into the gates?

Each gate includes an integrated gate-to-source resistor and a gate-to-source Zener diode clamp for overvoltage protection.