TD9944TG-G

$1.61

Description：MOSFET 2N-CH 240V 8SOIC
Series：-

SKU:9f08fb6b4156 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 240V 8SOIC
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：240V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：125pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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TD9944TG-G

Overview

The TD9944TG-G is a dual N-channel enhancement-mode vertical DMOS FET in an 8-lead SOIC package. It features a maximum drain-to-source breakdown voltage of 240V and a gate threshold voltage of 2.0V max. The device provides a static on-resistance of 6.0Ω max at VGS=10V, ID=0.5A, with an ON-state drain current capability of 1.0A min. Input capacitance is limited to 125pF max, supporting fast switching speeds.

Feature Summary

Dual N-channel configuration utilizing vertical DMOS structure for high input impedance and positive temperature coefficient.
Low threshold voltage design enables direct logic level interfacing with TTL and CMOS standards.
Fast switching characteristics combined with low input and output leakage currents.
Inherent immunity to thermal runaway and thermally-induced secondary breakdown.

Applications

Logic level interfaces
Solid state relays
Analog switches
General purpose line drivers

Procurement Notes

Verify the component origin as Supertex Inc., now part of Microchip Technology, through official datasheets or authorized distributors. Confirm the 'G' suffix indicates lead-free and RoHS compliance. Ensure the 8-lead SOIC package matches the required footprint and that the 240V rating aligns with system voltage requirements.

Selection Notes

Select this component when a dual N-channel MOSFET with a 240V breakdown voltage and low gate threshold is required. The 6.0Ω on-resistance suits applications drawing up to 1.0A. Verify compatibility with the 8-lead SOIC package dimensions and ensure operating temperatures fall within the -55°C to +150°C range specified.

Part Context

This device belongs to the TD9944 series of dual N-channel enhancement-mode vertical DMOS FETs. Manufactured using a silicon-gate process, it combines bipolar power handling capabilities with MOS input characteristics. The series is designed for switching and amplifying applications requiring low threshold voltages and fast switching speeds.