TF202THC-3-TL-H

Overview

The TF202THC-3-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain current of 1 mA and a power dissipation rating of 100 mW. The device utilizes a 3-VTFP surface-mount package. Key electrical parameters include a gate-source cutoff voltage of 200 mV at 1 µA, a maximum input capacitance of 3.5 pF at 5 V, and a junction temperature operating limit of 150°C.

Feature Summary

• N-channel JFET configuration for signal processing
• Low power consumption with 100 mW dissipation
• Surface-mount 3-VTFP packaging for compact designs

Applications

• Electret condenser microphone preamplifiers
• High-impedance analog signal switching
• Low-noise amplifier input stages

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status via official datasheets before integration. Check for obsolescence notices or lifecycle changes from the manufacturer to ensure long-term supply stability for production runs.

Selection Notes

Select this component for applications requiring high input impedance and low noise characteristics in small form factors. Ensure circuit design accommodates the specific pinch-off voltage requirements. Verify thermal management capabilities align with the 100 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the TF202 series of JFETs designed for audio and sensor interface applications. It serves as a discrete solution for maintaining signal integrity in high-impedance circuits. The component is widely used in consumer electronics and industrial sensing systems where low distortion is critical.

Replacement Considerations

Consult official cross-reference tools for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution. Review manufacturer documentation for any functional differences in replacement parts.