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Product Detailed Parameters
- Description：JFET N-CH 1MA 3VTFP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：210 µA @ 5 V
- Current Drain (Id) - Max：1 mA
- Voltage - Cutoff (VGS off) @ Id：200 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：3.5pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：100 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, Flat Leads
- Supplier Device Package：3-VTFP
- Grade：-
- Qualification：-
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Overview
The TF202THC-5-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a silicon construction and is housed in a 3-pin VTFP surface-mount package. The device supports a maximum continuous drain current of 1 mA and a maximum power dissipation of 100 mW. Key electrical characteristics include a gate-source breakdown voltage of -20 V, a gate-source cutoff voltage of -1 V, and a zero-gate-voltage drain current (Idss) of 240 µA at Vgs=0. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel JFET configuration for signal amplification
- Silicon-based construction for thermal stability
- Surface-mount 3-pin VTFP packaging
Applications
- Electrostatic condenser microphone pre-amplifiers
- Low-noise analog signal processing circuits
- High-impedance input stages
Procurement Notes
Verify the specific suffix '5' against official datasheets to confirm Idss binning, as variations exist within the TF202THC family. Confirm RoHS compliance status via manufacturer documentation. Check component availability as this series may be subject to discontinuation or lifecycle changes. Ensure the 3-VTFP footprint matches the design layout requirements.
Selection Notes
Select this component when a low-noise N-channel JFET with high input impedance is required for audio or sensor interfaces. Compare the 240 µA Idss specification against circuit biasing needs. Verify that the -20 V gate-source breakdown voltage exceeds the maximum expected reverse bias in the application. Ensure the operating temperature range covers the environmental conditions.
Part Context
This part belongs to the TF202THC series of JFETs designed for low-noise applications. It is functionally similar to other variants like the TF202THC-4-TL-H but differs in specific electrical parameter bins, particularly the zero-gate-voltage drain current. The series is commonly used in professional audio equipment and precision instrumentation.
Replacement Considerations
Cross-reference tools suggest checking equivalent N-channel JFETs from other manufacturers. Verify pinout compatibility and electrical parameters such as Idss and Vgs(off) before substitution. Consult official cross-reference data for confirmed alternatives.
