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The Qorvo TGF2023-2-01 is a discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT). It operates within a frequency range of DC to 18 GHz. The device provides a saturated output power of 40.1 dBm at 3 GHz, with a nominal power gain of 21 dB and a maximum Power Added Efficiency (PAE) of 73.3%. It requires a drain voltage bias between 12 V and 32 V, with a quiescent current ranging from 50 mA to 250 mA. The die dimensions are 0.82 mm x 0.92 mm x 0.10 mm.
Verify the specific suffix against official Qorvo documentation to confirm electrical tolerances and binning. Ensure compatibility with existing thermal management designs due to the high power density of the GaN-on-SiC die. Confirm package handling requirements for bare die components during assembly.
Select this component for designs requiring broadband performance up to 18 GHz with high PAE. Compare against the TGF2023-2-02 variant to determine if specific gain or efficiency thresholds match the system requirements. Evaluate the 12-32 V bias window against available power supply rails.
This part belongs to the TGF2023 series of discrete GaN HEMTs designed by Qorvo for defense and aerospace applications. The series supports advanced radar and electronic warfare systems, leveraging Qorvo's expertise in GaN-on-SiC technology to deliver high reliability and performance in mission-critical environments.
The TGF2023-2-02 is a related variant within the same family. Verify if the -02 suffix offers different electrical characteristics or binning that might serve as an alternative. No other direct public substitutes are confirmed.