TGF2023-2-05

Overview

The Qorvo TGF2023-2-05 is a discrete 5 mm GaN-on-SiC HEMT operating from DC to 18 GHz. It delivers 25 W output power with 43 dBm saturated power at 6 GHz. The device achieves 64.4% maximum PAE and 17.6 dB linear gain at 6 GHz. Packaged as a bare die, it supports high-efficiency RF amplification in broadband wireless systems.

Feature Summary

• Discrete 5 mm GaN-on-SiC HEMT construction for robust performance
• Broadband operation covering DC to 18 GHz frequency range
• High efficiency with 64.4% maximum PAE at 6 GHz
• Designed for defense, aerospace, and broadband wireless applications

Applications

• Defense radar systems
• Aerospace communication links
• Broadband wireless infrastructure

Procurement Notes

Verify the specific suffix -2-05 against the official Qorvo datasheet to confirm electrical parameters and mechanical dimensions. Ensure compatibility with existing thermal management solutions for bare die mounting. Confirm RoHS compliance status through manufacturer documentation prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring wide bandwidth up to 18 GHz and high power density. Evaluate thermal resistance requirements for the bare die package. Compare PAE and gain metrics against system linearity needs. Ensure biasing circuits support the specified voltage and current levels for optimal performance.

Part Context

Part of the TGF2023 series of GaN HEMTs. Offers higher power than lower-wattage variants in the same family. Designed for high-reliability applications where size and weight are critical constraints. Provides a balance of gain and efficiency for complex modulation schemes.

Replacement Considerations

No direct public substitutes are confirmed. Similar power levels may be found in other Qorvo families but require re-evaluation of pinouts and thermal characteristics.