TGF2965-SMTR13

Overview

The Qorvo TGF2965-SMTR13 is a Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) designed for radio frequency applications. It operates within a frequency range of 30 MHz to 3 GHz and features a 32 V drain-source breakdown voltage. The device delivers an output power of 5 W at the 1 dB compression point (P1dB) with a gain of 18 dB. It includes integrated RF input matching to simplify circuit design. The component is housed in a 16-lead Quad Flat No-Lead (QFN) package measuring 3x3 mm, suitable for surface-mount technology.

Feature Summary

• Integrated RF input matching network for simplified impedance interfacing
• High electron mobility GaN on Silicon Carbide construction for robust performance
• Surface-mount compatible 16-lead QFN package for compact PCB layouts

Applications

• Wireless infrastructure base stations
• Point-to-point microwave communication links
• Test and measurement equipment amplifiers

Procurement Notes

Verify the specific suffix SMTR13 against official Qorvo documentation to confirm the tape-and-reel packaging configuration. Ensure compatibility with standard surface-mount assembly processes. Confirm that the 32 V rating aligns with system bias requirements. Check for RoHS compliance status in the latest datasheet revision. Validate the 16-QFN footprint dimensions against PCB layout constraints.

Selection Notes

Select this component when a discrete GaN solution with built-in input matching is required for the 30 MHz to 3 GHz band. The 5 W output power capability suits moderate power amplifier stages. Consider the thermal dissipation characteristics of the QFN package for heat management. Evaluate the 18 dB gain against system noise figure and linearity specifications. Compare against other Qorvo GaN devices if higher power or different frequency ranges are needed.

Part Context

This part belongs to Qorvo's portfolio of discrete GaN RF transistors. It complements matched pairs and multi-stage amplifier solutions by providing a single-device option for lower power segments. The TGF2965 series focuses on ease of integration through internal matching networks. It serves as a building block for broadband RF systems requiring high efficiency and linearity.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacements require equivalent electrical parameters including 32 V rating, 5 W output, and 16-QFN packaging. Consult Qorvo engineering for cross-reference recommendations.