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Product Detailed Parameters
- Description：DC-12 GHZ, 25W, 32V GAN RF TR
- Series：-
- Mfr：Qorvo
- Package：Tray
- Technology：HEMT
- Frequency：12GHz
- Gain：11dB
- Voltage - Test：32 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：25W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：20-VFQFN Exposed Pad
- Supplier Device Package：20-QFN (3x4)
- Configuration：N-Channel
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Overview
The TGF2979-SM is an RF FET, specifically an N-channel MOSFET HEMT, manufactured by Qorvo. It operates within a frequency range of 2.8 to 3.4 GHz and is housed in a compact 16-VFQFN package with two exposed pads. The device is characterized by a gain of 13 dB and requires a drain voltage of 40 V. For proper operation, the component draws a drain current of 25 mA. These specifications define its electrical performance envelope and physical form factor for integration into radio frequency circuits.
Feature Summary
- Utilizes N-channel MOSFET HEMT technology for high-frequency signal processing
- Designed for operation within the 2.8 to 3.4 GHz frequency band
- Integrated into a 16-VFQFN surface-mount package with exposed thermal pads
Applications
- Evaluation board testing for RF transistor development
- Radio frequency amplifier stages requiring specific gain characteristics
- Wireless communication infrastructure components
Procurement Notes
Verify the authenticity of the TGF2979-SM component through official Qorvo channels or authorized distributors. Confirm that the received part matches the specified 16-VFQFN package and electrical parameters. Ensure compliance with relevant RoHS standards and check for any discontinuation notices or limited supply alerts prior to finalizing procurement decisions.
Selection Notes
Select the TGF2979-SM when designing circuits operating between 2.8 and 3.4 GHz that require a 13 dB gain profile. Consider the 40 V drain voltage requirement and 25 mA current consumption during power budgeting. The 16-VFQFN package dictates specific PCB layout constraints regarding pad size and thermal management for adequate heat dissipation.
Part Context
The TGF2979-SM belongs to Qorvo's portfolio of RF transistors, often evaluated using dedicated tools such as the TGF2979-SM-EVB2 evaluation board. This series supports the development of high-performance radio frequency systems, providing engineers with reliable active components for signal amplification and processing in modern wireless applications.
Replacement Considerations
Consult Qorvo documentation for direct replacements. Potential alternatives within the same family include TGF2977-SM and TGF2978-SM, though specific parameter matching is required to ensure functional equivalence in existing designs.
