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Product Detailed Parameters
- Description：0.03-3.0GHZ,10W,32V GAN RF I/P-M
- Series：-
- Mfr：Qorvo
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：HEMT
- Frequency：30MHz ~ 3GHz
- Gain：17.1dB
- Voltage - Test：32 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：50 mA
- Power - Output：10W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：16-VFQFN Exposed Pad
- Supplier Device Package：16-QFN (3x3)
- Configuration：N-Channel
Download product information
Overview
The Qorvo TGF3015-SM is a discrete GaN on SiC HEMT designed for high-power RF applications. It operates within a frequency range of 30 MHz to 3.0 GHz and features an integrated 50-ohm input matching network. The device delivers an output power (P3dB) of 10 W, with specific performance metrics including 11 W at 2.4 GHz. Typical linear gain is 17.1 dB, and the typical Power Added Efficiency (PAE) at P3dB is 62.7% at 2.4 GHz. It utilizes a 16-QFN (3x3 mm) surface-mount package.
Feature Summary
- Discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor construction
- Integrated 50-ohm input matching network for simplified circuit design
- High power output capability suitable for demanding RF environments
Applications
- Base station power amplifiers
- Broadband RF power amplification
- Military radar systems
Procurement Notes
Verify component authenticity through authorized Qorvo distribution channels. Confirm datasheet revision status prior to integration. Ensure thermal management solutions align with the specified power dissipation requirements. Validate package compatibility with PCB layout specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring wideband operation from 30 MHz to 3 GHz with high linearity. Consider the integrated input match to reduce external component count. Evaluate thermal constraints due to high power density in the 16-QFN package. Compare efficiency metrics against alternative devices for specific frequency bands.
Part Context
This part belongs to Qorvo's portfolio of GaN RF transistors, previously associated with TriQuint branding. It represents a discrete solution for high-power amplification, distinct from integrated MMICs. The product line targets infrastructure and defense markets requiring robust RF performance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Qorvo resources for current replacement or upgrade paths.
