TIG052TS-TL-E

$1.27

Description：IGBT 400V 8TSSOP
Series：-

SKU:e03a78411171 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 400V 8TSSOP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：400 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：5.5V @ 2.5V, 150A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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TIG052TS-TL-E

Overview

The TIG052TS is an N-channel IGBT manufactured by SANYO Semiconductor Co.,Ltd. It features a collector-to-emitter breakdown voltage of 400 V and supports a maximum pulsed collector current of 150 A with a pulse width up to 500 μs. The device operates with a low gate drive voltage of 2.5 V and includes a built-in gate-to-emitter protection diode. Electrical characteristics include a typical gate-to-emitter threshold voltage of 1.0 V and a maximum saturation voltage of 5.5 V at 150 A. Input, output, and reverse transfer capacitances are 3800 pF, 58 pF, and 47 pF respectively at 1 MHz. The component is housed in a TSSOP-8 package with a mounting height of 1.1 mm.

Feature Summary

Low-saturation voltage for efficient power handling
Low voltage drive capability requiring only 2.5 V
Built-in gate-to-emitter protection diode
Guaranteed dv/dt performance

Applications

Light-controlling flash applications

Procurement Notes

Verify the manufacturer designation as SANYO Semiconductor Co.,Ltd. when sourcing this component. Confirm that the specific ordering number ENA1258 matches the required specifications. Ensure that the product status aligns with current availability requirements before finalizing procurement plans.

Selection Notes

Select the TIG052TS for circuits requiring high pulsed current handling up to 150 A. Ensure the operating temperature remains within the specified channel temperature range of -40°C to 150°C. Verify that the gate series resistance meets the recommended minimum of 82 Ω to protect the device during turn-off operations.

Part Context

This component belongs to the IGBT category, specifically designed for high-power switching applications. It is part of SANYO Semiconductor's portfolio of discrete semiconductor products. The TIG052TS utilizes an enhancement-type structure suitable for demanding electronic equipment environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer or authorized distributors for alternative components if this specific model is unavailable.