TIG056BF

Overview

The TIG056BF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for through-hole mounting in the TO-220FI(LS) package. It features a collector-emitter breakdown voltage of 430 V and supports a maximum pulsed collector current of 240 A under test conditions of 320 V, 15 V gate drive, and 10 ohm resistance. The device has a maximum power dissipation of 30 W and operates at junction temperatures up to 150°C. Electrical characteristics include a turn-on delay time of 46 ns and a turn-off delay time of 140 ns. The saturation voltage is specified as a maximum of 5 V when driven at 15 V with a collector current of 240 A.

Feature Summary

• Standard input type configuration for general switching applications
• Through-hole mounting capability utilizing TO-220FI(LS) package format
• High-voltage blocking capability suitable for medium-power circuits

Applications

• Industrial motor control systems
• Switch-mode power supplies
• Inverter circuits

Procurement Notes

Verify component authenticity and datasheet alignment before integration, as the TIG056BF is listed as obsolete. Confirm that alternative sourcing channels provide genuine parts matching the original onsemi specifications. Check for any potential supply chain restrictions or end-of-life notices that may impact long-term production viability. Ensure storage conditions comply with moisture sensitivity level requirements prior to assembly.

Selection Notes

Select this component for designs requiring a 430 V rated IGBT in a standard through-hole package. Evaluate thermal management strategies carefully due to the 30 W power dissipation limit. Verify that the driving circuit can provide the necessary 15 V gate drive signal to achieve the specified 240 A pulsed current capability. Consider the trade-offs between switching speed and conduction losses inherent to standard IGBT technology for the target application frequency.

Part Context

The TIG056BF belongs to the TIG056 base product series from onsemi. It is categorized as a discrete semiconductor product within the single IGBT segment. The component utilizes a TO-220FI(LS) supplier device package, which is a variant of the standard TO-220 form factor designed for through-hole PCB mounting. This family of devices is typically employed in power electronics where robust voltage handling and moderate current capacity are required.

Replacement Considerations

Direct substitute part numbers are not explicitly confirmed in the provided documentation. Engineers should consult onsemi's official replacement guides or cross-reference databases for equivalent 430 V, TO-220 packaged IGBTs with comparable electrical parameters.