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Product Detailed Parameters
- Description：IGBT 400V 150A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：5V @ 4V, 150A
- Power - Max：1.2 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The TIG067SS-TL-2W is a single N-channel IGBT from onsemi, rated for 400V collector-to-emitter voltage and 150A pulsed collector current. It features a low saturation voltage of 3.8V typical at 150A with a 4V gate drive. The device operates within a channel temperature range up to 150°C and includes built-in gate-to-emitter protection. Packaged in an SOIC8 (SOT-96) format, it supports high-speed switching with a fall time of 270ns under specified resistive load conditions.
Feature Summary
- Low-saturation voltage design
- High-speed switching capability
- Built-in gate-to-emitter protection diode
Applications
- Light-controlling flash circuits
Procurement Notes
Verify the specific ordering suffix TL-2W against the official datasheet to confirm the tape-and-reel packaging quantity of 2,500 pieces per reel. Ensure compliance with Pb-Free, Halogen Free, and RoHS standards as stated in the product documentation before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring a 400V rating and high pulsed current handling up to 150A. Consider the SOIC8 package constraints and the recommended gate series resistance of 36 ohms or higher to manage dv/dt during turn-off. Validate thermal performance on the specified FR4 substrate for power dissipation requirements.
Part Context
This part belongs to the TIG067SS family of single IGBTs manufactured by onsemi. It utilizes an enhancement-type structure designed for efficient switching operations. The device is distinct from module configurations, offering a discrete solution for medium-power applications requiring robust voltage blocking capabilities.
Replacement Considerations
Consult the official onsemi datasheet for direct cross-reference information. Verify pinout compatibility and electrical parameter overlaps if substituting with other 400V, 150A IGBTs in SOIC8 packages.
FAQ
What is the maximum allowable dv/dt for the TIG067SS?
The maximum collector-to-emitter dv/dt is rated at 1500 V/μs when VCE is less than or equal to 320V and starting from a junction temperature of 25°C.
How does the gate drive voltage affect operation?
The device is designed for a 4.0V drive voltage. The saturation voltage is specified at 3.8V typical when IC is 150A and VGE is 4V.
What protection features are integrated into the gate?
The TIG067SS includes a built-in gate-to-emitter protection diode to safeguard the gate terminal from voltage spikes.
