TIP110G

$1.03

Description：TRANS NPN DARL 60V 2A TO-220
Series：-

SKU:d91ff16b9785 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

TIP110G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 60V 2A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TIP110G

Description：TRANS NPN DARL 60V 2A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)：2mA
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 1A, 4V
Power - Max：2 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for TIP110G

TIP110G

Single Bipolar Transistors Overview

The TIP110G is a monolithic NPN Darlington power transistor from onsemi, housed in a TO-220AB package. It features a continuous collector current of 2.0 A and a collector-emitter sustaining voltage (VCEO(sus)) of 60 Vdc minimum at 30 mAdc. The device offers a typical DC current gain (hFE) of 2500 at 1.0 Adc and a maximum collector-emitter saturation voltage of 2.5 Vdc at 2.0 Adc. Total power dissipation reaches 50 W at 25°C case temperature. Built-in base-emitter shunt resistors are integrated for stability.

Single Bipolar Transistors Feature Summary

Monolithic construction with integrated base-emitter shunt resistors
High DC current gain suitable for general-purpose amplification
Low collector-emitter saturation voltage for efficient switching

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Low-speed switching applications
Inductive load driving

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and packaging configuration. Ensure the component matches the required voltage rating for the target application. Confirm availability as some variants in this series may be discontinued. Validate thermal management requirements against the specified junction-to-case resistance.

Single Bipolar Transistors Selection Notes

Select based on the required collector-emitter voltage rating, as other models in the series offer higher voltages. Consider the high current gain for low drive current requirements. Evaluate thermal dissipation capabilities relative to the expected operating conditions and heat sink constraints.

Single Bipolar Transistors Part Context

This component belongs to the TIP11x complementary silicon transistor family, which includes both NPN and PNP variants. The series is designed for medium-power applications requiring high current gain. The G suffix indicates a lead-free package compliant with environmental standards.