Single Bipolar Transistors TIP112TU product image

TIP112TU

  • Description:TRANS NPN DARL 100V 2A TO-220-3
  • Series:-

SKU:a4f1a1d6f850 Category: Brand:

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TIP112TU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 100V 2A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TIP112TU

  • Description:TRANS NPN DARL 100V 2A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max):2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for TIP112TU

TIP112TU

Single Bipolar Transistors Overview

The TIP112TU is an NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a monolithic construction with integrated base-emitter shunt resistors and is housed in a TO-220 3L single gauge package. The device supports a collector-emitter voltage of 100 V, a continuous DC collector current of 2 A, and a pulse collector current of 4 A. It offers a minimum DC current gain of 1000 at 1 A and 500 at 2 A. Thermal dissipation reaches 50 W at a case temperature of 25°C. The junction temperature maximum is 150°C.

Single Bipolar Transistors Feature Summary

  • Monolithic construction with built-in base-emitter shunt resistors
  • High DC current gain for efficient drive requirements
  • Low collector-emitter saturation voltage
  • Complementary to the TIP115, TIP116, and TIP117 PNP series

Single Bipolar Transistors Applications

  • Medium power linear applications
  • Switching applications
  • Industrial use

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component meets all absolute maximum ratings for your operating conditions. Ensure compliance with RoHS directives if required by your design specifications. Validate thermal management strategies based on the specified power dissipation limits.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current gain and robust switching capabilities within a TO-220 form factor. Consider the complementary PNP devices for push-pull configurations. Evaluate thermal resistance and heat sinking requirements to maintain junction temperatures within safe operating limits during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the TIP11x family of NPN epitaxial silicon Darlington transistors. The family includes variants with different voltage ratings, such as the TIP110 (60 V) and TIP111 (80 V). These devices are designed for medium power applications and feature integrated shunt resistors to simplify circuit design and improve stability.

Single Bipolar Transistors Replacement Considerations

TIP112

Single Bipolar Transistors FAQ

What is the function of the internal resistors in the TIP112TU?

The device features built-in base-emitter shunt resistors that help stabilize the transistor and prevent false triggering due to leakage currents.

Is the TIP112TU suitable for high-frequency applications?

The datasheet specifies it for medium power linear and switching applications. High-frequency performance characteristics are not explicitly detailed beyond output capacitance data.

How does the TIP112TU relate to other TIP11x models?

It is part of a complementary series where TIP112 (100V NPN) pairs with TIP117 (100V PNP), while TIP110/TIP115 and TIP111/TIP116 offer lower voltage ratings.

TIP112TUTIP112TU

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