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TK2K2A60F,S4X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is X35 PB-F POWER MOSFET TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK2K2A60F,S4X
- Description：X35 PB-F POWER MOSFET TRANSISTOR
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.2Ohm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：4V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 300 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for TK2K2A60F,S4X
Single FETs, MOSFETs Overview
The TK2K2A60F,S4X is a silicon N-channel enhancement-mode power MOSFET manufactured by Toshiba Semiconductor and Storage. It features a TO-220SIS (TO-220-3) through-hole package with a maximum drain-source voltage of 600 V and a continuous drain current of 3.5 A at 25°C. The device exhibits a typical on-resistance of 2.2 ohms and a gate charge of 13 nC. It supports a maximum power dissipation of 30 W and operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes the MOSIX technology for high-voltage switching applications
- Designed as a single N-channel enhancement-mode transistor
- Constructed using silicon semiconductor material
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Power amplification tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix S4X against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure that the TO-220SIS pinout matches your PCB footprint requirements before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a 600V rating and low current handling capability are required in a standard through-hole format. Consider the 2.2 ohm on-resistance for thermal management calculations, as it dictates conduction losses under load conditions.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba's discrete power MOSFET portfolio, specifically utilizing MOSIX technology. It serves as a standalone switching element distinct from integrated driver ICs or multi-channel modules, designed for direct circuit integration.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on matching electrical ratings and physical package dimensions.
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