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TK4A60D(STA4,Q,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 4A TO220SIS. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK4A60D(STA4,Q,M)
- Description：MOSFET N-CH 600V 4A TO220SIS
- Series：π-MOSVII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for TK4A60D(STA4,Q,M)
Single FETs, MOSFETs Overview
The TK4A60D(STA4,Q,M) is a Toshiba N-channel power MOSFET belonging to the π-MOSVII series. It features a TO-220SIS through-hole package and offers a drain-source voltage of 600 V with a continuous drain current of 4 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 1.7 Ω at 10 V gate drive and includes a built-in body diode. Designed for high-speed switching applications, it operates up to a junction temperature of 150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes π-MOSVII technology for optimized capacitance and switching performance
- Features a rugged double-diffusion structure with enhanced circuit design flexibility
- Includes a built-in body diode to simplify snubber circuit requirements
Single FETs, MOSFETs Applications
- Switching power supplies
- AC adapters
- Motor drivers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix (STA4,Q,M) against official Toshiba documentation to confirm exact packaging and compliance attributes. Confirm availability status as distribution data may vary. Ensure thermal management aligns with the specified package dissipation ratings during integration.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 600 V blocking capability in a through-hole format. The π-MOSVII series provides lower capacitances compared to standard π-MOS devices. Evaluate thermal resistance constraints given the 4 A current rating and 1.7 Ω on-resistance characteristics for efficient heat dissipation.
Single FETs, MOSFETs Part Context
This part belongs to the π-MOSVII product line, which utilizes a double-diffusion MOS structure suitable for high-withstand voltage applications. The series is characterized by reduced capacitances due to optimized chip design, offering improved switching speed over previous generations while maintaining high ruggedness.
Single FETs, MOSFETs Replacement Considerations
Consult official Toshiba cross-reference guides for verified substitutes. Potential alternatives within the same family include the TK4A60DA or other π-MOSVII variants with matching voltage and current ratings.
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