TP65H035G4WSQA

Single FETs, MOSFETs Overview

The TP65H035G4WSQA is a fourth-generation SuperGaN enhancement-mode field-effect transistor rated for 650V drain-source voltage and 47.2A continuous current. It features a typical on-resistance of 35 mΩ and operates within a junction temperature range up to 175°C. The device utilizes a TO-247-3 through-hole package with a power dissipation capacity of 187W. Key electrical characteristics include a gate threshold voltage of 4.8V, total gate charge of 22 nC, and symmetric rise and fall times of 10 ns.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards with an elevated maximum junction temperature rating of 175°C.
• Patented SuperGaN technology delivers high figure-of-merit performance and efficiency curves that reduce power loss compared to silicon carbide alternatives.
• Enhanced noise immunity provided by a higher gate threshold voltage, preventing unintended turn-on from gate transients in high-power systems.
• Optimized package design reduces parasitic inductance and improves soft-switching capabilities to minimize electromagnetic interference.

Single FETs, MOSFETs Applications

• On-board chargers (OBC) for electric vehicles
• DC-DC converters in automotive powertrains
• Main traction inverters for battery electric vehicles

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to limited supply status. Confirm the specific manufacturing lot against the latest datasheet revisions to ensure compliance with automotive quality standards. Validate thermal management requirements align with the 175°C junction temperature rating during system integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and robust automotive qualification. The TO-247-3 package facilitates through-hole mounting for high-current scenarios. Consider the 4V threshold voltage for improved noise tolerance in environments prone to gate transients compared to lower-threshold GaN devices.

Single FETs, MOSFETs Part Context

This device belongs to the Gen IV SuperGaN family developed by Transphorm. It represents an advancement in gallium nitride power switching technology, specifically engineered to meet the stringent demands of the automotive market while offering superior thermal performance over previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in available documentation. Evaluate alternative 650V GaN FETs based on pin compatibility, Rds(on) specifications, and AEC-Q101 certification status if replacement is required.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature for this device?

The TP65H035G4WSQA supports a maximum junction temperature of 175°C, which exceeds standard ratings for many competing technologies.

How does the gate threshold voltage affect system stability?

With a threshold voltage of approximately 4.8V, the device offers enhanced noise immunity, reducing the risk of accidental turn-on caused by gate voltage transients.