TP65H070G4RS-TR

$8.50

Description：650 V 29 A GAN FET
Series：SuperGaN®
Mfr：Transphorm
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bd21eb29727e Category: Single FETs, MOSFETs Brand: Transphorm

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Product introduction

TP65H070G4RS-TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Transphorm. Its product description is 650 V 29 A GAN FET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TP65H070G4RS-TR

Description：650 V 29 A GAN FET
Series：SuperGaN®
Mfr：Transphorm
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：85mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：638 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TOLT
Package / Case：16-PowerSOP Module

Single FETs, MOSFETs datasheet and documents for TP65H070G4RS-TR

TP65H070G4RS-TR

Single FETs, MOSFETs Overview

The TP65H070G4RS-TR is a 650V normally-off Gallium Nitride High Electron Mobility Transistor (HEMT) from Renesas Electronics' Gen IV SuperGaN platform. It features a typical on-resistance of 72mΩ and a maximum rating of 800V breakdown voltage. The device operates in surface-mount TOLT packages with 16 leads, supporting temperatures from -55°C to +150°C. Key electrical parameters include a typical gate charge of 9nC, output charge of 80nC, and input capacitance of 638pF. It provides a continuous drain current of 29A at 25°C.

Single FETs, MOSFETs Feature Summary

Built on fourth-generation technology with dynamic RDS(on)eff verified through production testing for enhanced reliability.
Features a robust design with wide gate safety margins and transient overvoltage capability.
Utilizes Kelvin source connections to improve switching performance and reduce parasitic effects.
Designed for easy driving using common gate drivers while maintaining low reverse recovery charge.

Single FETs, MOSFETs Applications

Integrated multi-in-one electric vehicle power units
High-efficiency motor control systems
On-board charging and DC/DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package type and reel configuration. Ensure compatibility with standard GaN gate drivers due to unique threshold characteristics. Confirm RoHS compliance and halogen-free status if required by assembly specifications. Cross-reference datasheet revisions to validate parameter updates before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and efficiency in hard or soft-switching circuits. The low Qoss and Ron*Qoss figure of merit support reduced system size and weight. Consider the TOLT package dimensions for thermal management and PCB layout constraints. Evaluate the 650V blocking capability against peak voltage stresses in the target topology.

Single FETs, MOSFETs Part Context

This part belongs to the Gen IV SuperGaN family, combining advanced high-voltage GaN HEMT technology with low-voltage silicon MOSFET techniques. It represents an evolution in wide-bandgap semiconductors aimed at replacing traditional silicon solutions in high-frequency power conversion.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same generation include TP65H070G4LSGB-TR for PQFN packaging variants. Verify pinout compatibility and thermal resistance differences when transitioning between TOLT and other package styles.