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TPC6110(TE85L,F,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 30V 4.5A VS-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TPC6110(TE85L,F,M)
- Description：MOSFET P-CH 30V 4.5A VS-6
- Series：U-MOSVI
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：56mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：VS-6 (2.9x2.8)
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for TPC6110(TE85L,F,M)
Single FETs, MOSFETs Overview
The Toshiba TPC6110(TE85L,F,M) is a low-voltage, high-speed N-channel MOSFET housed in a compact VS-6 surface-mount package. It features a U-MOS structure designed for synchronous rectification and high-frequency switching applications. The device offers low on-resistance and fast switching characteristics suitable for power supply circuits in portable electronics.
Single FETs, MOSFETs Feature Summary
- U-MOS trench structure for low on-resistance
- High-speed switching capability
- Compact VS-6 surface-mount package
Single FETs, MOSFETs Applications
- Synchronous rectification DC-DC converters
- Notebook PC power supply circuits
- Cell phone power supply circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix (TE85L, F, or M) against the manufacturer's datasheet to confirm packaging details such as tape and reel specifications. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring small footprint and efficient power conversion. The U-MOS technology provides improved performance over standard planar structures. Consider thermal management requirements due to the small package size when designing the PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba's Low-V DSS High-Speed MOSFETs category within the TPC Series. It utilizes the VS-6 package variant, which is characterized by its small footprint and suitability for dense mounting in portable devices like mobile phones and notebooks.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the TPC6xxx series or other U-MOS based MOSFETs with compatible VDSS and ID ratings. Verify pinout compatibility and electrical parameters such as RDS(on) and switching times before substitution.
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