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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 8SOP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：20mOhm @ 4.8A, 4V
- Vgs(th) (Max) @ Id：1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2010pF @ 10V
- Power - Max：750mW
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-SOP (5.5x6.0)
- Grade：-
- Qualification：-
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Overview
The TPC8207(TE12L) is a dual N-channel silicon MOSFET from Toshiba, utilizing U-MOSIII technology. It features a compact SO-8 package with dimensions of 6.0 mm by 5.0 mm. Key electrical parameters include a drain-source voltage (V_DSS) of 20 V and a continuous DC drain current (I_D) of 6 A at 25°C. The device exhibits a typical drain-source ON-resistance (R_DS(ON)) of 16 mΩ at V_GS = 4.0 V and I_D = 4.8 A. Gate threshold voltage (V_th) ranges from 0.5 V to 1.2 V. Total gate charge (Q_g) is typically 22 nC. Thermal resistance from channel to ambient is 83.3 °C/W for single-device operation on a glass-epoxy board.
Feature Summary
- Dual configuration in a small and thin surface-mount package
- Low drain-source ON-resistance for efficient power switching
- High forward transfer admittance for improved gain
- Low leakage current characteristics
Applications
- Lithium-ion battery protection circuits
- Notebook PC power management
- Portable equipment load switching
Procurement Notes
Verify the specific ordering suffix TE12L against official Toshiba documentation to confirm reel packaging specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in the latest datasheet revisions before integration into production designs.
Selection Notes
Select this component for applications requiring low R_DS(ON) within a 20 V voltage rating. Evaluate thermal performance based on the specified thermal resistance values for single or dual operation modes. Consider the gate charge requirements for driving circuitry compatibility in high-frequency switching environments.
Part Context
This part belongs to Toshiba's U-MOSIII series of silicon N-channel MOSFETs. It is designed specifically for portable electronics where space constraints and efficiency are critical. The dual configuration allows for bridge or push-pull applications within a minimal footprint compared to discrete single devices.
Replacement Considerations
Check for direct cross-references in distributor databases. Verify pinout compatibility and electrical parameter margins if substituting with other 20 V dual N-channel MOSFETs in SO-8 packages.
