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The TPC8207(TE12L,Q) is a dual-channel silicon N-channel MOS type field effect transistor utilizing U-MOSIII technology. It features a low drain-source ON resistance of 16 mΩ (typical) and high forward transfer admittance of 11 S (typical). The device supports a maximum drain-source voltage of 20 V and a continuous DC drain current of 6 A per channel. Key electrical characteristics include a gate threshold voltage range of 0.5 to 1.2 V and a maximum leakage current of 10 µA. Thermal performance allows for single-device operation power dissipation up to 1.5 W, with a channel temperature limit of 150 °C.
Verify the specific ordering suffix TE12L,Q against the manufacturer's latest documentation to confirm packaging details and reel specifications. Ensure compliance with RoHS directives as indicated in standard product releases. Confirm availability through authorized distributors and check for any recent lifecycle status updates or alternative recommendations from Toshiba Semiconductor and Storage.
Select this component for applications requiring dual N-channel MOSFETs with low RDS(ON) within a 20 V system. Consider the thermal resistance values when designing heat dissipation strategies, noting the difference between single and dual operation conditions. Ensure gate drive voltages align with the specified threshold and ON resistance test conditions for optimal performance.
This part belongs to Toshiba's U-MOSIII series of silicon N-channel MOSFETs, designed for general electronics applications. The dual-channel architecture integrates two independent transistors into a single package, reducing board space compared to discrete solutions. It is intended for use in portable devices and battery-powered equipment where efficiency and size are critical factors.
Consult Toshiba Semiconductor and Storage for officially confirmed substitute part numbers. Verify pin compatibility, electrical ratings, and package dimensions before replacing the original component in an existing design.