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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5A 8SOP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.5A, 4V
- Vgs(th) (Max) @ Id：1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：780pF @ 10V
- Power - Max：450mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-SOP (5.5x6.0)
- Grade：-
- Qualification：-
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Overview
The TPC8208 is a Silicon N-Channel MOS Field Effect Transistor utilizing Toshiba's U-MOS III technology, designed for applications such as lithium-ion battery systems and portable equipment. It features a compact footprint with low drain-source on-resistance of 38 mΩ (typical) at VGS=4.0V and ID=2.5A. The device supports a maximum drain-source voltage of 20V and a continuous DC drain current of 5A. Key electrical characteristics include a gate threshold voltage range of 0.5 to 1.2V and high forward transfer admittance of 6.3 S. Thermal resistance from channel to ambient is specified at 83.3°C/W for single-device operation on a glass-epoxy board.
Feature Summary
- U-MOS III technology enables small footprint and thin package design suitable for space-constrained portable devices.
- Low drain-source ON resistance minimizes conduction losses in power switching applications.
- High forward transfer admittance ensures efficient signal amplification and fast switching capabilities.
- Robust avalanche energy rating supports handling of transient electrical stresses.
Applications
- Lithium-ion battery protection and management circuits
- Notebook PC power distribution and switching
- Portable electronic equipment power stages
Procurement Notes
Verify the specific ordering suffix (TE12L, Q, or M) against the manufacturer's current catalog to confirm packaging type and reel specifications. Ensure the component version matches the required RoHS compliance status for your region. Cross-reference the datasheet revision date with your bill of materials to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a 20V N-channel MOSFET with low RDS(ON) is required for portable electronics. Consider the thermal resistance values based on the expected PCB copper area and airflow conditions. Verify that the gate drive voltage aligns with the 4.0V test condition for optimal on-resistance performance. Evaluate the package size constraints against the available board space for the TO-251AA format.
Part Context
This part belongs to Toshiba's U-MOS III family of silicon N-channel MOSFETs. It is engineered specifically for low-voltage, high-current switching applications where efficiency and size are critical. The device complements other parts in the series by offering a balance of low on-resistance and robust switching speed within a standard surface-mount package.
Replacement Considerations
Check for direct pin-compatible alternatives with similar 20V ratings and comparable RDS(ON) values. Ensure any substitute maintains the same U-MOS III generation technology for equivalent switching characteristics. Verify that the replacement package matches the TO-251AA dimensions and thermal pad configuration for proper mounting.
