TPC8211(TE12L,Q,M)

$0.26

Description：MOSFET 2N-CH 30V 5.5A 8SOP
Series：-

SKU:813d528f2f73 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.5A 8SOP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.5A
Rds On (Max) @ Id, Vgs：36mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1250pF @ 10V
Power - Max：450mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.173", 4.40mm Width)
Supplier Device Package：8-SOP (5.5x6.0)
Grade：-
Qualification：-

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TPC8211(TE12L,Q,M)

Overview

The TPC8211 is a silicon N-channel MOSFET from Toshiba's U-MOS III series, packaged in an SOT-346 (SC-88A) surface-mount format. It features a low drain-source ON-resistance of 25 mΩ at VGS = 10 V and 31 mΩ at VGS = 4.5 V. The device supports a maximum drain current of 5.5 A DC and withstands a drain-source voltage of 30 V. Key electrical parameters include a gate threshold voltage range of 1.3 to 2.5 V, forward transfer admittance of 7.0 S, and total gate charge of 25 nC. Thermal resistance from channel to ambient is 83.3 °C/W for single-device operation.

Feature Summary

U-MOS III technology provides enhanced switching performance with high forward transfer admittance.
Low ON-resistance minimizes conduction losses in power management applications.
Enhancement mode operation ensures reliable turn-on characteristics with defined threshold voltages.

Applications

Lithium-ion battery protection circuits
Portable equipment power switches
Notebook PC power management

Procurement Notes

Verify the specific ordering suffix (TE12L, Q, or M) against official Toshiba documentation to confirm packaging type, reel specifications, and environmental compliance status such as RoHS compatibility. Confirm lead times and availability directly with authorized distributors or sales representatives.

Selection Notes

Select this component for applications requiring low RDS(ON) in compact surface-mount designs. Ensure the gate drive voltage meets the minimum requirement of 4.5 V for optimal conduction performance. Verify thermal derating requirements based on the intended PCB layout and ambient operating conditions.

Part Context

This part belongs to Toshiba's U-MOS III family of N-channel MOSFETs designed for portable electronics. It serves as a switch in battery-powered devices where space constraints and efficiency are critical. The SOT-346 package allows for high-density mounting on printed circuit boards.

Replacement Considerations

Check for direct equivalents within the Toshiba TPC8xxx series that share identical pinouts and electrical ratings. Verify that any substitute maintains the same package dimensions and thermal characteristics to ensure mechanical fit and reliability.