TPC8213-H(TE12LQ,M

Overview

The TPC8213-H is a dual N-channel MOSFET from Toshiba Semiconductor and Storage, utilizing Ultra-High-Speed U-MOSIII technology. It features a PS-8 package with dimensions of 2.9 mm x 2.4 mm x 0.8 mm. Key electrical parameters include a drain-source breakdown voltage (V(BR)DSS) of 60 V, a continuous drain current (ID) of 5 A, and a typical drain-source ON-resistance (RDS(ON)) of 40 mΩ at VGS = 10 V. The device exhibits a total gate charge (Qg) of 11 nC at VDD = 48 V and VGS = 10 V, with a forward transfer admittance (|Yfs|) of 11 S. Maximum power dissipation is 1.5 W for single-device operation on a glass-epoxy board.

Feature Summary

• Dual configuration in a compact PS-8 package designed for space-constrained portable equipment.
• Ultra-High-Speed U-MOSIII technology enables high-speed switching with low gate charge.
• Low drain-source ON-resistance supports high-efficiency DC/DC converter applications.
• Enhancement mode operation with defined threshold voltage range for reliable logic interfacing.

Applications

• High-efficiency DC/DC converters
• Notebook PC power management circuits
• Portable electronic equipment

Procurement Notes

Verify the specific ordering suffix TE12LQ against the manufacturer's official documentation to confirm lead-free status and tape-and-reel packaging specifications. Ensure compliance with RoHS directives and check for any regional availability restrictions or end-of-life notices prior to finalizing procurement plans.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a minimal footprint. Evaluate thermal resistance values based on the specific PCB copper area and mounting configuration, as power dissipation ratings vary significantly between single and dual operation modes. Confirm that the required gate drive voltage aligns with the specified RDS(ON) performance curves.

Part Context

This part belongs to Toshiba’s U-MOSIII series of silicon N-channel MOSFETs, engineered for ultra-high-speed switching capabilities. The TPC8213-H specifically targets applications demanding low conduction losses and rapid transient response in small form-factor electronics.

Replacement Considerations

Consult official cross-reference lists for equivalent dual N-channel MOSFETs in PS-8 packages. Verify that substitute parts match the 60 V breakdown voltage, 5 A current rating, and thermal characteristics before implementation.

FAQ

What is the maximum channel temperature allowed during operation?

The maximum channel temperature (Tch) is limited to 150°C.

How does the power dissipation rating change between single and dual operation?

For single-device operation on board (a), PD is 1.5 W. For single-device value at dual operation on board (a), PD is 1.1 W.

What is the typical gate switch charge (QSW)?

The typical gate switch charge is 2.9 nC under conditions of VDD ≈ 48 V, VGS = 10 V, and ID = 5 A.