TPC8228-H,LQ

Overview

The TPC8228-H is a dual N-channel MOSFET utilizing Toshiba U-MOS II-H technology, housed in an SOP-8 package. It features a drain-source voltage of 60 V and a typical on-resistance of 38 mΩ at VGS = 10 V. The device supports a continuous drain current of 3.8 A and a pulsed current of 15.2 A. Key dynamic characteristics include a total gate charge of 11 nC and a switch charge of 2.6 nC. Operating temperatures range from -55°C to 150°C.

Feature Summary

• Dual configuration within a compact SOP-8 package for space-constrained designs
• High-speed switching capability with low gate charge for efficient power management
• Low on-resistance to minimize conduction losses in DC-DC converter applications

Applications

• DC-DC Converters
• CCFL Inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component lot number matches the required specifications before integration into production systems.

Selection Notes

Select this component for applications requiring a 60V rating and low RDS(ON) in a small footprint. Ensure thermal design accounts for the specified channel-to-ambient resistance values under single or dual operation conditions to maintain junction temperature within safe limits.

Part Context

This part belongs to the TPC8228 series of dual N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is designed for general-purpose switching applications where size and efficiency are critical constraints.

Replacement Considerations

Consult official replacement lists for verified equivalents. Cross-referencing requires matching voltage, current, and package specifications.