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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6.1A, 5.3A
- Rds On (Max) @ Id, Vgs：32mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 10V
- Power - Max：450mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The Toshiba TPC8408 is a dual silicon MOSFET containing one P-channel and one N-channel enhancement-mode device in an SOP-8 package. It features a drain-source voltage of ±40 V, continuous drain currents of -5.3 A (P-ch) and 6.1 A (N-ch), and pulsed currents of -21.2 A and 24.4 A respectively. Typical on-resistances are 33 mΩ for the P-channel at VGS = -10 V and 24 mΩ for the N-channel at VGS = 10 V. Gate threshold voltages range from -0.8 to -2.0 V (P-ch) and 1.3 to 2.3 V (N-ch). Maximum power dissipation is 1.5 W per device in single operation and 1.1 W in dual operation. The operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- Compact SOP-8 package design reduces footprint while maintaining thermal performance.
- Low on-resistance values support efficient power handling in motor driver circuits.
- Fast switching characteristics enable high-speed operation in mobile equipment applications.
Applications
- Motor drivers
- Mobile equipment
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through direct supplier documentation or Toshiba sales representatives. Ensure storage and handling procedures prevent electrostatic discharge damage during installation.
Selection Notes
Evaluate thermal resistance requirements based on single or dual channel operation modes. Verify that gate drive voltages align with specified threshold ranges for reliable switching. Consider maximum power dissipation limits under expected ambient temperatures and board mounting conditions.
Part Context
This component belongs to Toshiba's U-MOS and U-MOS-H series of silicon P-/N-channel MOSFETs. Commercial production began in April 2011. The device utilizes advanced oxide-isolated silicon-gate CMOS processes to achieve low leakage current and high reliability within a small surface-mount form factor.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the difference between single and dual operation power dissipation?
In single operation, power is supplied to only one device, allowing higher dissipation ratings (1.5 W P-ch, 1.5 W N-ch). In dual operation, power is evenly supplied to both devices, reducing the per-device rating to 1.1 W (P-ch) and 1.1 W (N-ch).
How does reverse bias affect the drain-source breakdown voltage?
Applying a reverse bias between the gate and source causes the device to enter V(BR)DSX mode, which lowers the drain-source breakdown voltage compared to standard conditions.
