Single FETs, MOSFETs TPCA8003-H(TE12LQM product image

TPCA8003-H(TE12LQM

  • Description:MOSFET N-CH 30V 35A 8SOP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)

SKU:c5fe74221baa Category: Brand:

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TPCA8003-H(TE12LQM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 30V 35A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPCA8003-H(TE12LQM

  • Description:MOSFET N-CH 30V 35A 8SOP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.6mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1465 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.6W (Ta), 45W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP Advance (5x5)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for TPCA8003-H(TE12LQM

TPCA8003-H(TE12LQM

Single FETs, MOSFETs Overview

The Toshiba TPCA8003-H is a silicon N-channel MOSFET utilizing Ultra-High-Speed U-MOSIII technology. It features a drain-source voltage of 30 V and a continuous DC drain current of 35 A. The device exhibits a typical drain-source ON-resistance of 5.1 mΩ at VGS=10V and ID=18A, with a maximum rating of 6.6 mΩ. Gate charge parameters include a total gate charge (Qg) of 25 nC at VGS=10V and a switch charge (QSW) of 8.4 nC. Thermal resistance from channel to case is 2.78 °C/W. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Ultra-High-Speed U-MOSIII technology enables high-speed switching performance for efficient power conversion.
  • Small footprint achieved through a compact and thin package design suitable for space-constrained applications.
  • Low drain-source ON-resistance minimizes conduction losses during operation.
  • Enhanced thermal characteristics support reliable performance under heavy load conditions.

Single FETs, MOSFETs Applications

  • High efficiency DC/DC converter applications
  • Notebook PC applications
  • Portable equipment applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TE12LQM against official Toshiba documentation to confirm packaging type and reel specifications. Ensure compatibility with surface mount assembly processes by reviewing the M-FLAT-2 or SOP Advance package dimensions provided in the datasheet. Confirm RoHS compliance status directly from the manufacturer's latest product release notes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance and fast switching speeds within a 30V system architecture. Evaluate the thermal resistance values against the expected ambient temperature and heat dissipation capabilities of the printed circuit board layout. Consider the gate charge requirements relative to the driving circuit's capability to ensure optimal switching transitions without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's portfolio of N-channel enhancement mode MOSFETs designed for general-purpose power switching. The U-MOSIII-H series focuses on reducing switching losses and improving overall system efficiency in portable electronics and power supply modules. It complements other devices in the TPCA series offering various voltage and current ratings for diverse application needs.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official cross-reference guides or distributor databases for verified alternatives that match the electrical and mechanical specifications.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is 30 V when the drain current is 10 mA and the gate-source voltage is 0 V.

How does the gate threshold voltage vary?

The gate threshold voltage (Vth) ranges from 1.1 V to 2.3 V, measured with a drain-source voltage of 10 V and a drain current of 1 mA.

What is the typical forward transfer admittance?

The typical forward transfer admittance (|Yfs|) is 60 S, measured at a drain-source voltage of 10 V and a drain current of 18 A.

TPCA8003-H(TE12LQMTPCA8003-H(TE12LQM

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