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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3A VS-8
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：49mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：590pF @ 10V
- Power - Max：330mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：VS-8 (2.9x1.5)
- Grade：-
- Qualification：-
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Overview
The TPCF8201 is a dual N-channel silicon MOSFET from Toshiba, utilizing U-MOS III technology. It features a VS-8 package with dimensions of 2.9 mm length, 1.5 mm width, and 0.8 mm height. Key electrical parameters include a drain-source voltage (V_DSS) of 20 V and a continuous DC drain current (I_D) of 3 A. The device exhibits a typical drain-source ON resistance (R_DS(ON)) of 38 mΩ at V_GS = 4.5 V and I_D = 1.5 A. Forward transfer admittance (|Y_fs|) is typically 5.4 S. Gate threshold voltage ranges from 0.5 V to 1.2 V. Maximum ratings specify a channel temperature of 150 °C and storage temperature range of -55 °C to 150 °C.
Feature Summary
- Dual configuration within a compact surface-mount package for space-constrained designs.
- Low on-resistance characteristics optimized for efficient power switching.
- High forward transfer admittance supporting robust drive capabilities.
- Enhancement-mode operation with defined gate threshold voltage levels.
Applications
- Notebook PC applications
- Portable equipment applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm exact packaging and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in the latest datasheet revisions before finalizing procurement orders.
Selection Notes
Select this component based on the 20 V drain-source voltage limit and 3 A continuous current requirement. Evaluate thermal performance using the provided junction-to-ambient thermal resistance values under single or dual device operation conditions. Consider the low R_DS(ON) for efficiency requirements in portable power management circuits.
Part Context
This part belongs to Toshiba's U-MOS III series of silicon N-channel MOSFETs. It is designed specifically for general electronics applications requiring small footprint and high reliability. The dual configuration allows for independent control of two channels within a single package, suitable for battery protection or load switching in mobile devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers' dual N-channel MOSFETs with similar voltage and current ratings.
