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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3.2A VS-8
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.2A
- Rds On (Max) @ Id, Vgs：72mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：330mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：VS-8 (2.9x1.5)
- Grade：-
- Qualification：-
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Overview
The TPCF8304 is a dual-channel P-channel MOSFET manufactured by Toshiba Semiconductor and Storage using U-MOS IV silicon technology. It features a -30 V drain-source breakdown voltage and a continuous drain current of -3.2 A. The device provides a typical drain-source ON resistance of 60 mΩ at VGS = -10 V and -1.6 A, with a forward transfer admittance of 5.9 S. It operates within a channel temperature range up to 150 °C and is housed in a VS-8 package measuring 2.9 mm x 1.5 mm x 0.8 mm.
Feature Summary
- Dual-channel configuration for integrated circuit design
- U-MOS IV silicon process technology for low on-resistance
- High forward transfer admittance for efficient switching
- Low leakage current characteristics
Applications
- Notebook PC applications
- Portable equipment power management
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free designation. Confirm that the package marking aligns with the intended pinout orientation before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring dual P-channel MOSFETs in a compact surface-mount footprint. Ensure thermal derating calculations account for the specified thermal resistance values under single or dual operation conditions. Verify gate drive voltages remain within the ±20 V absolute maximum rating.
Part Context
This part belongs to Toshiba's U-MOS IV series of silicon P-channel MOSFETs. It is designed specifically for portable electronics where space constraints and power efficiency are critical. The dual-channel architecture allows for simplified board layouts compared to discrete single-channel alternatives.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying electrical parameters and pin configurations.
