TPCF8402(TE85L,F,M

Overview

The TPCF8402 is a dual-channel silicon MOSFET featuring one N-channel and one P-channel enhancement-mode device. It utilizes Toshiba's U-MOS IV / U-MOS III technology within a VS8-8 surface-mount package. The N-channel unit provides a drain-source breakdown voltage of 30 V, continuous drain current of 4.0 A, and typical on-resistance of 38 mΩ at VGS = 10 V. The P-channel unit offers a breakdown voltage of -30 V, continuous drain current of -3.2 A, and typical on-resistance of 60 mΩ at VGS = -10 V. Maximum gate-source voltage ratings are ±20 V for both channels.

Feature Summary

• Dual configuration integrating complementary N-channel and P-channel enhancement-mode transistors in a single package.
• Low drain-source on-resistance characteristics optimized for efficient power switching applications.
• High forward transfer admittance supporting fast signal response and effective drive capabilities.
• Low leakage current specifications ensuring minimal power loss during off-state conditions.

Applications

• Portable equipment power management circuits
• Motor drive control systems
• DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and reel specifications. Confirm component availability status as distribution data may indicate end-of-life or discontinuation phases. Ensure compliance with RoHS directives if required by the target application environment. Validate that the VS8-8 package dimensions match the intended PCB footprint layout constraints.

Selection Notes

Select this component when a compact solution requires matched N-channel and P-channel switching characteristics. The low on-resistance values support high-efficiency designs in portable devices. Verify thermal dissipation requirements against the specified channel-to-ambient thermal resistance values under expected operating conditions. Ensure gate drive voltages remain within the ±20 V maximum rating limits.

Part Context

This part belongs to the TPCF series of dual MOSFETs manufactured by Toshiba Semiconductor. The series employs U-MOS technology to achieve low on-resistance and high switching speed in small packages. Similar parts in the lineup include variations with different voltage ratings or current capacities, designed for integration into space-constrained electronic systems requiring complementary switching pairs.

Replacement Considerations

Direct substitutes must match the 30V/4A N-channel and 30V/3.2A P-channel configuration in a VS8-8 package. Verify pinout compatibility and thermal resistance characteristics before substitution. Consult Toshiba's official cross-reference guides for validated alternatives with identical electrical parameters.

FAQ

What is the typical drain-source on-resistance for the N-channel?

The typical RDS(ON) for the N-channel is 38 mΩ when measured at VGS = 10 V and ID = 2.0 A.

What is the maximum allowable gate-source voltage?

The maximum gate-source voltage (V_GSS) rating is ±20 V for both the N-channel and P-channel units.

Does the device support avalanche energy operation?

Yes, the datasheet specifies single-pulse avalanche energy ratings: 2.6 mJ for the N-channel and 0.67 mJ for the P-channel.