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TPH1400ANH,L1Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N CH 100V 24A 8-SOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TPH1400ANH,L1Q
- Description：MOSFET N CH 100V 24A 8-SOP
- Series：U-MOSVIII-H
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 48W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP Advance (5x5)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for TPH1400ANH,L1Q
Single FETs, MOSFETs Overview
The TPH1400ANH,L1Q is an N-channel silicon power MOSFET from Toshiba's U-MOS VIII-H series, designed for high-efficiency switching applications. It features a 100V drain-source voltage rating and a continuous drain current of 24A at 25°C. The device utilizes the SOP Advance package to optimize thermal performance and footprint efficiency. Key electrical characteristics include a low on-resistance of 0.0136Ω at a gate drive voltage of 10V, ensuring minimal conduction losses in DC-DC converters and switching voltage regulator circuits.
Single FETs, MOSFETs Feature Summary
- Utilizes U-MOS VIII-H technology for enhanced switching efficiency and reduced power loss
- Engineered with SOP Advance packaging to improve thermal dissipation and board space utilization
- Optimized for low on-resistance to support high-current DC-DC converter applications
Single FETs, MOSFETs Applications
- DC-DC converters
- Switching voltage regulators
- Automotive 48V electrical systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L1Q(M) against the manufacturer's latest datasheet to confirm tape-and-reel specifications and marking details. Ensure compatibility with SOP Advance footprints during PCB layout. Cross-reference part numbers with official Toshiba distributors to avoid counterfeit components and confirm RoHS compliance status.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust 100V blocking capability with high current handling in compact form factors. The U-MOS VIII-H process offers superior trade-offs between on-resistance and gate charge compared to previous generations. Evaluate thermal management requirements based on the SOP Advance package's thermal resistance characteristics for the intended operating environment.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba's U-MOS VIII-H family, which represents advanced silicon MOSFET technology. The series focuses on reducing energy consumption in power conversion stages. The TPH1400ANH variant specifically targets mid-power applications where efficiency and size constraints are critical, bridging the gap between standard discrete MOSFETs and integrated power modules.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same U-MOS VIII-H family should be evaluated for pin compatibility and electrical parameter equivalence. Verify that alternative packages match the SOP Advance footprint dimensions. Check if newer revisions offer improved thermal metrics or lower Rds(on) values suitable for the specific load conditions.
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