TPS1120D

Overview

The TPS1120D is a dual P-channel enhancement-mode MOSFET manufactured by Texas Instruments. It features a SOIC-8 surface-mount package and operates within a temperature range of -40°C to +125°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 15 V, a continuous drain current (Id) of 1.17 A, and a maximum gate-source voltage (Vgs) of ±15 V. The device exhibits a typical on-resistance (Rds(on)) of 180 mΩ, a gate charge (Qg) of 5.45 nC, and a threshold voltage (Vgs(th)) of 1.5 V. Power dissipation is rated at 840 mW, with rise and fall times of 10 ns.

Feature Summary

• Dual configuration integrating two independent P-channel enhancement-mode transistors in a single compact package.

Applications

• Battery-powered portable equipment requiring efficient power switching.

Procurement Notes

Verify the specific manufacturer part number against official Texas Instruments documentation to ensure component authenticity. Confirm that the ordering suffix matches the required package style and tape-and-reel or tube specifications. Cross-reference RoHS compliance status directly with the latest datasheet revision history provided by the manufacturer.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage applications. Ensure the 15 V drain-source voltage rating exceeds the system's maximum supply voltage. Verify that the 1.17 A continuous current capability meets the load requirements and that the SOIC-8 footprint aligns with the PCB layout constraints.

Part Context

The TPS1120D belongs to the TPS1120 series of dual P-channel enhancement-mode MOSFETs from Texas Instruments. This series provides integrated dual-transistor solutions designed for space-constrained designs. The D suffix indicates an 8-pin SOIC package variant within this product family.

Replacement Considerations

The TPS1120DG4 is a verified equivalent variant within the same series offering identical functional characteristics.