TQM076NH04LDCR RLG

$1.63

Description：MOSFET 2N-CH 40V 15A 8PDFN
Series：PerFET™

SKU:720f91317c97 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 15A 8PDFN
Series：PerFET™
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2006pF @ 25V
Power - Max：55.6W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFN (5x6)
Grade：Automotive
Qualification：AEC-Q101

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TQM076NH04LDCR RLG

Overview

The TQM076NH04LDCR RLG is a dual N-channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes Si technology and features an 8-PDFNU (5x6) surface-mount package. The device supports a drain-source voltage of 40V and offers a continuous drain current of 14A at case temperature. Key electrical parameters include a maximum on-resistance of 76 mOhms, a gate charge of 19 nC, and an input capacitance of 1217 pF. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.

Feature Summary

Dual N-Channel configuration for efficient power switching applications
Automotive-grade reliability with AEC-Q101 certification
Surface-mount design in an 8-PDFNU package for compact layouts

Applications

Automotive power management systems
DC-DC converter circuits
Motor control applications

Procurement Notes

Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix 'RLG' corresponds to the specific tape and reel packaging requirements. Ensure compatibility with the intended PCB footprint and thermal management strategy. Cross-reference datasheet revisions to confirm parameter consistency.

Selection Notes

Select this component when a dual N-channel MOSFET with 40V rating and low on-resistance is required. Consider the 8-PDFNU package size for space-constrained designs. Verify thermal performance requirements against the specified power dissipation limits. Ensure the gate drive voltage aligns with the threshold and charge specifications for optimal switching efficiency.

Part Context

This component belongs to the TQM series of automotive-grade MOSFETs from Taiwan Semiconductor. The series focuses on low on-resistance and high reliability for automotive electronics. The TQM076NH04LDCR variant specifically targets applications requiring dual channels in a compact surface-mount package.

Replacement Considerations

Check for direct substitutes within the same TQM series or other manufacturers offering equivalent 40V dual N-channel MOSFETs in 8-PDFNU packages. Verify pinout compatibility and thermal characteristics before substitution.