TQM138KDCU6 RFG

$0.29

Description：MOSFET 2N-CH 60V 0.32A SOT363
Series：-

SKU:0f5e02d06820 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.32A SOT363
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Rds On (Max) @ Id, Vgs：1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：28pF @ 30V
Power - Max：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

Download product information

TQM138KDCU6 RFG

Overview

The TQM138KDCU6 RFG is a dual N-channel small-signal MOSFET manufactured by Taiwan Semiconductor. It features a maximum drain-source voltage of 60V and a continuous drain current of 0.32A. The device has an on-resistance of 1.6 ohms at a gate-source voltage of 4.5V. It is housed in a surface-mount SOT-363 package, which contains two independent transistors within a single compact footprint. The component is rated for a power dissipation of 320mW at 25°C ambient temperature.

Feature Summary

Dual N-channel configuration providing two independent switching elements in one package
Automotive-grade reliability certified under AEC-Q101 standards
Logic-level operation suitable for low-voltage control applications

Applications

Compact switching circuits requiring dual channel isolation
Automotive electronic systems meeting AEC-Q101 requirements
Low-power signal control tasks in consumer electronics

Procurement Notes

Verify the specific suffix 'RFG' to confirm the tape-and-reel packaging format and quantity per reel. Ensure the ordering part number matches the exact electrical characteristics and package type required for the design. Cross-reference the manufacturer datasheet version to confirm pinout compatibility before integration into the final assembly process.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal SOT-363 footprint. The 60V rating and 0.32A current capacity suit low-power logic interfacing. Consider the 1.6 ohm on-resistance for efficiency calculations in battery-operated or space-constrained designs where multiple switches are needed.

Part Context

This part belongs to Taiwan Semiconductor's series of small-signal MOSFETs designed for compact surface-mount applications. The SOT-363 housing allows for high-density PCB layouts. As a dual transistor solution, it simplifies circuit design by replacing discrete components with a single integrated package, reducing board space and assembly complexity.

Replacement Considerations

Consult official substitution lists for compatible dual N-channel MOSFETs in SOT-363 packages. Verify that any alternative part meets the same 60V voltage rating, 0.32A current limit, and AEC-Q101 automotive qualification if used in automotive contexts.