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The TQM210NH08LDCR RLG is a dual N-channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features an 8-PowerTDFN (5x6 mm) surface-mount package with wettable flanks for enhanced soldering reliability. The device supports a drain-source voltage of 80V and delivers a continuous drain current of 2.1A at 25°C ambient temperature, rising to 10A at case temperature. Key electrical characteristics include a maximum on-resistance of 35 milliohms at 10V gate drive and 2.1A, a threshold voltage up to 2.5V, and a total gate charge of 7nC at 10V. It operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix 'RLG' against the manufacturer's official datasheet to confirm packaging details and lead times. Ensure the component meets AEC-Q101 automotive standards if required for your application. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component for applications requiring a compact dual N-channel solution with high thermal efficiency. The 80V rating and low on-resistance make it suitable for 12V or 24V automotive systems. Consider the 8-PowerTDFN package size for space-constrained PCB layouts requiring robust solder joint integrity.
This part belongs to the TQM series from Taiwan Semiconductor, which focuses on automotive-grade MOSFETs. The TQM210 variant specifically targets low-current, high-efficiency switching needs in automotive environments, offering a balance between performance and thermal management in a small footprint.
Check for direct substitutes within the TQM series, such as TQM230NH08DCR, ensuring voltage and current ratings match. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.