TQM250NB06DCR RLG

$0.84

Description：MOSFET 2N-CH 60V 6A 8PDFNU
Series：-

SKU:cc7b5d9fcb51 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 6A 8PDFNU
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1398pF @ 30V
Power - Max：2.5W (Ta), 58W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFNU (5x6)
Grade：Automotive
Qualification：AEC-Q101

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TQM250NB06DCR RLG

Overview

The TQM250NB06DCR RLG is an automotive-grade dual N-channel MOSFET manufactured by Taiwan Semiconductor. It features a PDFN56U Dual package with wettable flanks and supports a maximum junction temperature of 175°C. The device provides a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 30A at 25°C case temperature. Key electrical parameters include a maximum on-resistance (RDS(on)) of 25mΩ at VGS=10V and a total gate charge (Qg) of 24nC. It is AEC-Q101 qualified and tested for 100% UIS and Rg.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Wettable flank package design to enhance solder joint reliability
High thermal performance supporting 175°C operating junction temperature
Validated for unlimited single pulse avalanche energy

Applications

12V Automotive Systems
Solenoid and Motor Control
Automotive Transmission Control
DC-DC Converters

Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm RoHS compliance and halogen-free status according to IEC 61249-2-21 requirements. Ensure the component meets moisture sensitivity level 1 specifications per J-STD-020 before integration into the manufacturing process.

Selection Notes

Select this component for applications requiring high current handling in compact surface-mount footprints. The low on-resistance minimizes conduction losses, while the 175°C rating allows operation in thermally constrained environments. Verify that the gate drive voltage aligns with the specified thresholds for optimal switching performance.

Part Context

This part belongs to the TQM series of automotive dual N-channel MOSFETs from Taiwan Semiconductor. The series is designed for robust performance in demanding automotive electronics. The PDFN56U package offers improved thermal dissipation compared to standard DFN packages, making it suitable for power management applications.

Replacement Considerations

Direct substitutes must match the 60V/30A rating, PDFN56U package, and AEC-Q101 qualification. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other TQM series variants if voltage or current requirements differ.